company blog about Supply Infineon IQE220N15NM5 OptiMOS™ 5 Low Voltage Power MOSFET 150 V

Shenzhen Mingjiada Electronics Co., Ltd. supplies Infineon IQE220N15NM5 OptiMOS™ 5 Low Voltage Power MOSFET 150 V in PQFN 3.3x3.3 drop-source package, Acquisition of N-Channel Power MOSFETs

Descripción

The IQE220N15NM5 is part of the Source-Down series with an RDS(on) of 22 mOhm. Source-Down technology uses a flip-flop silicon chip that is inverted inside the component.

It improves heat dissipation, power density and layout possibilities. The new technology is available with two different footprints: standard gate and centre gate (optimised for parallelisation).

Features

• RDS(on) of 22 mOhm
• Better RthJC compared to PQFN packages
• Standard gate footprint available
• New optimised layout possibilities

Benefits

• Highest power density and performance
• Excellent thermal performance
• Efficient use of space
• Standard gate for easy layout installation
• Improved PCB losses
• Reduced parasitics

Potential Applications

• Drive
• SMPS
• Servers
• Telecommunications
• Battery Management

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