company blog about Supply Infineon OptiMOS™ 6 Series Power MOSFET Setting New Industry Standard For Benchmark Performance

Supply Infineon OptiMOS™ 6 Series Power MOSFET Setting New Industry Standard For Benchmark Performance

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Within the power semiconductor sector, each technological iteration aims to overcome the triple constraints of efficiency, power density, and reliability. As a global leader in power semiconductors, Infineon consistently drives industry advancement through innovation. Its OptiMOS™ 6 power MOSFET series, featuring breakthrough chip design, leading manufacturing processes and comprehensive adaptability across all scenarios, surpasses both previous generations and comparable industry devices. Setting new benchmarks for power MOSFET performance across conduction losses, switching characteristics, thermal management and reliability, it injects core momentum into technological advancement across new energy, industrial control and consumer electronics sectors.

Core Technology Innovation: Laying the Foundation for Performance Leadership

The exceptional performance of the OptiMOS™ 6 power MOSFET stems from Infineon's dual breakthroughs in chip design and manufacturing processes. This overcomes the industry-wide challenge of balancing conduction losses and switching losses in traditional MOSFETs, achieving a comprehensive leap in performance. As the new flagship of Infineon's OptiMOS series, this range incorporates proprietary innovations precisely optimised for diverse voltage scenarios. It forms a comprehensive product matrix spanning 60V, 120V, and 200V voltage ratings, catering to all application requirements from low-voltage drive to high-voltage conversion.

At the core process level, OptiMOS™ 6 employs Infineon's cutting-edge trench MOSFET technology. The 200V variant further incorporates proprietary needle-shaped trench technology, which significantly enhances the chip's current carrying capacity and energy efficiency through optimised cell structure design. Compared to the preceding OptiMOS™ 3 technology, the 200V variant of OptiMOS™ 6 achieves a 42% reduction in on-resistance (RDS(on)) at room temperature, rising to a substantial 53% reduction under 175°C high-temperature operation. This breakthrough directly drives a significant decrease in conduction losses, laying a robust foundation for enhanced system efficiency. Concurrently, this technology achieves comprehensive optimisation of gate charge (Qg), reverse recovery charge (Qrr), and output charge (Qoss). Notably, Qrr and Qoss are reduced by 42% compared to the previous generation, effectively improving switching characteristics. This minimises switching losses while simultaneously reducing electromagnetic interference (EMI), enabling compliance with stringent EMI standards without requiring additional filtering costs.

For the 120V-rated OptiMOS™ 6 products, packaging and parameter optimisation are equally outstanding. The series encompasses multiple packaging options including D2PAK, PQFN, and SuperSO8. The IPF019N12NM6 model, leveraging the advantages of its D2PAK 7-pin package, achieves an exceptionally low on-resistance (RDS(on)@10V) of 1.9mΩ at 120V withstand voltage, with a continuous drain current (ID) of up to 254A – significantly surpassing comparable products in the same package. Meanwhile, the PQFN-packaged ISZ106N12LM6 model not only boasts a compact footprint but also achieves an on-resistance of 10.6mΩ and a current carrying capacity of 62A, perfectly meeting the demands of miniaturised, high-power-density designs. Furthermore, the entire series features a wide operating temperature range of -55°C to 175°C and has passed industrial-grade certification, ensuring stable operation under extreme conditions.

Comprehensive Performance Leap: Redefining Industry Benchmarks

OptiMOS™ 6 power MOSFETs, centred on ‘ultimate efficiency, exceptional reliability, and flexible adaptability,’ comprehensively surpass industry averages across key performance metrics, redefining the performance benchmark for power MOSFETs. Their advantages manifest across three dimensions.

Ultimate Efficiency: Minimising Losses, Maximising Efficiency

Conduction losses and switching losses are pivotal factors affecting power conversion efficiency. OptiMOS™ 6 achieves synergistic optimisation of both through structural enhancements and process upgrades. According to the conduction loss formula Pcond = ID²·RDS(on), the exceptionally low RDS(on) significantly reduces conduction losses at equivalent currents. For instance, the 120V variant IPB022N12NM6 features an RDS(on) as low as 2.2mΩ, delivering markedly lower conduction losses compared to conventional devices. Concurrently, optimised gate and output charge characteristics reduce switching losses by over 40%, delivering particularly pronounced efficiency advantages in high-frequency applications. Whether in high-frequency DC-DC converters for telecommunications or PFC circuits in industrial power supplies, OptiMOS™ 6 enhances system efficiency by 3-5%. This enables end products to effortlessly meet stringent global energy efficiency standards while reducing energy consumption and thermal management burdens.

Exceptional Reliability: Enhanced Stability for Extreme Conditions

Reliability is the lifeline of power devices. OptiMOS™ 6 incorporates robust design considerations for demanding industrial and renewable energy environments, employing multiple optimisations to enhance long-term stability and durability. This series boasts outstanding thermal performance, with optimised packaging and chip layout significantly reducing thermal resistance. This substantially lowers temperature rise under heavy loads, minimising thermal stress impact on lifespan. Additionally, its wide gate-source voltage (VGS) range of ±30V and precise threshold voltage (Vth) control provide strong immunity to interference, reducing susceptibility to gate breakdown faults. Furthermore, the OptiMOS™ 6 200V variants feature an enhanced Safe Operating Area (SOA), boosting current-carrying capacity in protective switching applications. Optimised parameter dispersion reduces VGS(th) variation by 25% compared to previous generations, improving current sharing performance in parallel configurations and further enhancing system reliability. The entire product range is certified to MSL Level 1 and complies with J-STD-020 standards, ensuring stability during storage and soldering processes.

Flexible Adaptability: Comprehensive Coverage, Simplified Design Workflow

OptiMOS™ 6 establishes a diversified product matrix spanning mainstream voltage ratings including 60V, 120V, and 200V. Packaging options encompass TO-220, D2PAK, PQFN, and SuperSO8, enabling precise alignment with diverse design requirements. The 60V variant focuses on high-speed DC-DC switching power supplies for telecommunications and AI servers, delivering superior soft-switching performance and thermal management to meet high-power, high-frequency applications. The 120V version is widely used in industrial motor drives, consumer switching power supplies, and high-power chargers, balancing efficiency with compact design. The 200V version targets energy storage systems, low-voltage drives, and micro-inverters, delivering high power density and reliability. It is particularly suited for motor drive applications in electric scooters, micro-EVs, and electric forklifts, enabling higher power output within the same package size while reducing parallel component counts and simplifying circuit design.

Furthermore, Infineon provides comprehensive design support for OptiMOS™ 6, including detailed application guides, simulation models, and local technical services. This assists engineers in rapidly completing selection, debugging, and optimisation, shortening product development cycles and reducing design costs. For scenarios requiring replacement of previous-generation devices or competing products, OptiMOS™ 6 enables seamless substitution without significant circuit modifications, delivering performance upgrades.

Empowering Multi-Domain Advancements: Driving Industry Technological Transformation

As an industry benchmark product, the launch of the OptiMOS™ 6 power MOSFET not only propels the iterative advancement of power semiconductor technology but also profoundly empowers multiple critical sectors including new energy, industrial control, consumer electronics, and telecommunications. This enables end products to achieve breakthrough performance and enhanced value.

In the new energy sector, OptiMOS™ 6 finds application in critical components such as DC-DC conversion within energy storage systems and photovoltaic micro-inverters. Its high efficiency and reliability enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and simultaneously reduce system thermal management costs. Within industrial control, these devices serve industrial motor drives, uninterruptible power supplies (UPS), and inverters. Their low-loss characteristics and wide operating temperature range enhance equipment stability and energy efficiency, supporting industrial automation upgrades. In consumer electronics, OptiMOS™ 6's compact packaging and high efficiency enable its use in high-power fast-charging adapters and laptop power supplies, achieving design objectives of ‘small footprint, high power, low heat generation’ to enhance user experience. Within telecommunications, its high-frequency switching performance and low EMI characteristics optimise power delivery for communication infrastructure, improving network equipment stability and energy efficiency.

Compared to industry counterparts, OptiMOS™ 6 not only excels in core performance but also leverages Infineon's comprehensive supply chain and technical services to provide end-to-end support from product selection to mass deployment. As a global leader in power semiconductors, Infineon possesses capacity advantages through its 12-inch wafer production lines, achieving yield rates 10 percentage points ahead of the industry. This ensures stable supply of OptiMOS™ 6 while mitigating supply chain risks arising from international trade fluctuations. Furthermore, its portfolio of over 20,000 patents covering core technologies provides robust assurance for the product's performance leadership.

Conclusion: Setting benchmarks through innovation, pioneering new frontiers with performance

Against the backdrop of advancing global carbon neutrality and industrial digitalisation, power semiconductors—as core components in energy conversion—directly determine the energy efficiency and competitiveness of end products. Infineon's OptiMOS™ 6 power MOSFET breaks through industry performance bottlenecks by delivering breakthrough technological innovation, comprehensively leading performance metrics, and full-scenario adaptability, thereby establishing a new industry benchmark for power MOSFETs.

From technological advancement to application empowerment, OptiMOS™ 6 not only showcases Infineon's profound technical expertise and innovative strength in power semiconductors but also provides core support for energy efficiency upgrades and technological transformation across industries. Moving forward, Infineon will continue to deepen its expertise in power semiconductor technology. Building upon the foundation of OptiMOS™ 6, the company will persistently push performance boundaries, driving the industry towards greater efficiency, reliability, and miniaturisation. This commitment will inject sustained momentum into global energy transition and industrial upgrading.

Relevant models:

IQE031N08LM6CGSC

IQE031N08LM6CG

IQE036N08NM6CGSC

IQE018N06NM6

IQE018N06NM6CG

IQE018N06NM6SC

IQE018N06NM6CGSC