company blog about [Supply] M29F800FB5AN6E2 (Micron) Memory IC Chips: 8Mbit Parallel NOR Flash Embedded Memory IC

[Supply] M29F800FB5AN6E2 (Micron) Memory IC Chips: 8Mbit Parallel NOR Flash Embedded Memory IC

Shenzhen Mingjiada Electronics Co., Ltd.——[Supply] M29F800FB5AN6E2 (Micron) 8Mbit Parallel NOR Flash Embedded Memory IC, Below are the product details for memory M29F800FB5AN6E2:

Basic Information:
Part Number: M29F800FB5AN6E2
Package: TSOP-48
Type: NOR Flash Memory IC

Overviews:
M29F800FB5AN6E2 is 8Mbit nonvolatile memory device. M29F800FB5AN6E2 enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM.

M29F800FB5AN6E2 is divided into blocks that can be erased independently, preserving valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE operations from modifying the memory. PROGRAM and ERASE commands are written to the command interface. An on-chip program/erase controller simplifies the process of programming or erasing the device by managing the operations required to update the memory contents.

M29F800FB5AN6E2——The end of a PROGRAM or ERASE operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

M29F800FB5AN6E2——CE#, OE#, and WE# control the bus operation of the memory. M29F800FB5AN6E2 enable simple connection to most microprocessors, often without additional logic. M29F800FB5AN6E2 is offered in 48-pin TSOP (12mm x 20mm) packages.

Product Attributes Of M29F800FB5AN6E2
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Organization: 1M x 8, 512K x 16
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

Features Of M29F800FB5AN6E2
• Supply voltage – VCC = 5V
• Access time: 55ns
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume modes
• Low power consumption
– Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature – Manufacturer code: 0x01h
• RoHS-compliant packages – TSOP48

Logic Diagram Of M29F800FB5AN6E2

The Micron M29F800FB5AN6E2 is a high-performance, high-reliability 8Mbit NOR Flash memory. The M29F800FB5AN6E2 is suitable for a wide range of application scenarios that require reliable data storage and fast read speeds. Its mature and stable technology, cost-effective and easy-to-use features make it an ideal choice for embedded systems, industrial control and automotive electronics.

Mingjiada Electronics has been supplying [Micron] M29F800FB5AN6E2 8Mbit NOR Flash Memory for a long time. For more product information about the memory M29F800FB5AN6E2, please check the official website of Mingjiada Electronics (https://www.integrated-ic.com/).