Shenzhen Mingjiada Electronics Co.,Ltd.Supply MOSFET IGLD60R190D1AUMA1_IGLD60R070D1AUMA3 600V CoolGaN™ Enhanced Power Transistor
Product Description
1、IGLD60R190D1AUMA1 Surface Mount N-Channel 600 V 10A(Tc) 62.5W(Tc) PG-LSON-8-1
Series: CoolGaN™ FET Type: N-Channel
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss): 600 V
Current at 25°C - Continuous Drain (Id): 10A (Tc)
Vgs(th) at different Id (max): 1,6V @ 960µA
Vgs(th) (max): 1,6V @ 960µA at different Id's
Input capacitance (Ciss) (max) at different Vds: 157 pF @ 400 V
Power Dissipation (Max): 62.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-LSON-8-1
Package/Shell: 8-LDFN Exposed Pad
Base Product Number: IGLD60
2, IGLD60R070D1AUMA3 Surface Mount N-Channel 600 V 15A (Tc) 114W (Tc) PG-LSON-8-1
Series CoolGaN™
FET: Type N-Channel
Technology: GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss): 600 V
Current at 25°C - Continuous Drain (Id): 15A (Tc)
Vgs(th) at different Id (max): 1,6V @ 2,6mA
Vgs(max): -10V
Input capacitance (Ciss) at different Vds (max): 380 pF @ 400 V
Power Dissipation (Max): 114W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-LSON-8-1
Package/Shell: 8-LDFN Exposed Pad
Introduction
The CoolGaN™600V enhancement power transistors provide fast switching speeds and minimal switching losses in a simple half-bridge topology for maximum efficiency.
The CoolGaN™ 600V family meets comprehensive GaN-specific approvals that go well beyond existing standards. It is targeted at datacom and server switching power supplies, telecom and adapters, chargers, wireless charging, and other applications requiring the highest efficiency or power density.
For further information, please feel free to contact Mr Chen by phone:
Tel: +86 13410018555
Email: sales@hkmjd.com
Company Home:http://www.hkmjd.com/
Contact Person: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753