Supply MOSFET Transistors, Supply [Infineon] IPA60R099P7 600V CoolMOS™ P7 N-Channel Power MOSFET Transistors
[Shenzhen Mingjiada Electronics Co., Ltd.] Long-Term Supply [Infineon] IPA60R099P7 600V CoolMOS™ P7 N-Channel Power MOSFET Transistors, Below is a detailed description of the transistor IPA60R099P7:
Part Number: IPA60R099P7
Package: TO-220-3
Type: CoolMOS™ P7 MOSFET Transistors
IPA60R099P7——Optimized superjunction MOSFET Transistors merging high energy efficiency with ease-of-use。
IPA60R099P7——The 600V CoolMOS™ P7 superjunction MOSFET Transistor is the successor to the 600V CoolMOS™ P6 series. IPA60R099P7 continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
IPA60R099P7——Product Attributes
Part Number: IPA60R099P7
Series: CoolMOS™ P7
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 99mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1952 pF @ 400 V
Power Dissipation (Max): 29W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack
IPA60R099P7——Summary Of Features
Efficiency
- 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Ease-of-use
- ESD ruggedness of ≥ 2kV (HBM class 2)
- Integrated gate resistor RG
- Rugged body diode
- Wide portfolio in through hole and surface mount packages
- Both standard grade and industrial grade parts are available
Benefits Of IPA60R099P7
Efficiency
- Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use
- Ease-of-use in manufacturing environments by stopping ESD failures occurring
- Integrated RG reduces MOSFET oscillation sensitivity
- MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
- Excellent ruggedness during hard commutation of the body diode seen in LLC topology
- Suitable for a wide variety of end applications and output powers
- Parts available suitable for consumer and industrial applications
Potential Applications Of IPA60R099P7
TV power supply
Industrial SMPS
Server
Telecom
Lighting
Applications Of IPA60R099P7
Commercial HVAC
Edge server solutions
Semiconductor solutions for home entertainment applications
Mingjiada Electronics——Supply [Infineon] IPA60R099P7 600V CoolMOS™ P7 N-Channel Power MOSFET Transistors.
The IPA60R099P7 is a 600V N-channel power MOSFET featuring Infineon's CoolMOS™ P7 technology. This technology optimises switching performance and on-resistance for high-efficiency power conversion applications.
Key Features Of IPA60R099P7
Voltage rating: 600V
On-resistance (RDS(on)): 0.099Ω
Current rating: 11A (continuous), 44A (pulsed)
Low gate charge (Qg): 28nC
Fast switching speed: Reduced switching losses
Low conduction loss: improved efficiency
TO-220 package: Easy mounting and heat dissipation
Electrical Characteristics Of IPA60R099P7
Drain-source voltage (VDS): 600V
Gate source voltage (VGS): ±20V
Threshold voltage (VGS(th)): 3V to 5V
Total gate charge (Qg): 28nC
Input capacitance (Ciss): 1300pF
Output capacitance (Coss): 110pF
Reverse transfer capacitance (Crss): 15pF
IPA60R099P7——Advantages
High efficiency: low conduction and switching losses
Excellent thermal performance: efficient heat dissipation
High reliability: suitable for harsh environments
Package Photo Of IPA60R099P7
The IPA60R099P7 is widely used in high-efficiency power conversion applications for high power density designs due to its low on-resistance, fast switching, and excellent thermal performance.
For more information about the IPA60R099P7, please visit the Mingarda Electronics website (https://www.integrated-ic.com/).
Contact Person: Mr. Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753