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Company BLOG

Supply NXP A2I20H060GNR1 RF LDMOS Wideband Integrated Power Amplifiers

Supply NXP A2I20H060GNR1 RF LDMOS Wideband Integrated Power Amplifiers

Product Description
A2I20H060GNR1 wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

Product Attributes
Technology:LDMOS
Configuration:Dual
Frequency:1.84GHz
Gain:28.9dB
Voltage - Test:28 V
Current - Test:24 mA
Power - Output:12W
Voltage - Rated:65 V
Mounting Type:Surface Mount

Features
Advanced High Performance In--Package Doherty
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Designed for Digital Predistortion Error Correction Systems

Pub Time : 2023-11-11 11:23:30 >> News list

Contact Details

ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

company blog about Supply NXP A2I20H060GNR1 RF LDMOS Wideband Integrated Power Amplifiers

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