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company blog about Supply NXP PMDXB600UNE Dual N-channel Trench MOSFET Transistors

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Company BLOG

Supply NXP PMDXB600UNE Dual N-channel Trench MOSFET Transistors

Supply NXP PMDXB600UNE Dual N-channel Trench MOSFET Transistors

Product Description

PMDXB600UNE is Dual N-channel enhancement mode Field-Effect Transistor in a leadless ultra small SOT1216 Surface-Mounted Device plastic package using Trench MOSFET technology.

Features

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

Applications

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

latest company news about Supply NXP PMDXB600UNE Dual N-channel Trench MOSFET Transistors 0

Pub Time : 2023-09-15 11:15:19 >> News list

Contact Details

ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

company blog about Supply NXP PMDXB600UNE Dual N-channel Trench MOSFET Transistors

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