company blog about Supply ON Gate Drivers:GaN,IGBT,FET,MOSFET,H-Bridge MOSFET,SiC MOSFET

Supply ON Gate Drivers:GaN,IGBT,FET,MOSFET,H-Bridge MOSFET,SiC MOSFET

Shenzhen Mingjiada Electronics Co., Ltd., as a leading global distributor of electronic components, provides customers with comprehensive solutions through its robust supply chain network, professional services, highly competitive pricing and a business philosophy centred on integrity.

Its supply advantages are primarily reflected in the following areas:

Global supply chain network: Direct collaboration with international brands ensures the supply of genuine products and eliminates counterfeit or substandard goods.

Stock availability and rapid delivery: Large-scale warehousing centres in Shenzhen, Hong Kong and other regions enable dispatch within 24 hours, making them particularly well-suited to meeting R&D sample requirements and urgent orders.

Highly Competitive Pricing: Bulk purchasing reduces customer costs, whilst large orders qualify for additional discounts, providing cost-effective solutions.

Flexible Procurement Models: We support a wide range of procurement needs, from small-batch samples to large-scale production orders, meeting customer requirements at every stage from R&D and pilot production to mass manufacturing.

I. Dedicated Gate Drivers for SiC MOSFETs (EliteSiC Companion Solutions)

Silicon carbide (SiC) MOSFETs feature high-speed switching, high voltage withstand capability and high temperature resistance; however, they impose stringent requirements regarding drive voltage amplitude, negative bias, common-mode interference (CMTI) immunity and Miller noise suppression. ON Semiconductor’s isolated and non-isolated SiC gate drivers are optimised for EliteSiC MOSFETs, support both positive and negative drive voltages, and feature ultra-high CMTI to mitigate the risk of false conduction.

Key Features

High peak sink/source drive currents to accommodate rapid charging and discharging of the large SiC gate charge;

Support for adjustable negative turn-off bias to suppress Miller-induced voltages during high-speed switching;

Common-mode transient immunity (CMTI) > 200 V/ns to withstand high-speed transient noise on high-voltage buses;

Integrated independent UVLO, soft shutdown, fault latch and active Miller clamping;

Available in automotive-grade AEC-Q100 and industrial-grade variants.

Representative models: NCP51705, NCP51563, NCP51752

Typical applications: On-board chargers (OBC), main drive inverters, energy storage converters, photovoltaic inverters and high-voltage DC charging stations.

II. GaN (Gallium Nitride HEMT) Dedicated Gate Drivers

Enhanced-mode GaN HEMTs have an extremely low gate breakdown voltage and are highly susceptible to overvoltage damage; therefore, traditional Si driver solutions cannot be used. ON Semiconductor’s GaN-dedicated drivers employ a regulated gate output architecture to precisely clamp the drive voltage, meeting the requirements of high-frequency ZVS topologies.

Key Features

Fixed, regulated drive output to prevent GaN gate breakdown due to overvoltage;

Extremely short propagation delay, supporting MHz-level high-frequency switching;

Independent high-side and low-side UVLO with high resistance to dV/dt noise;

Separate source and sink current output pins, facilitating external configuration of turn-on/turn-off rates to optimise the balance between EMI and power loss.

Representative Model: NCP51810

Typical Applications: 48V intermediate bus power supplies, data centre power supplies, active-clamped flyback converters, LLC resonant converters, and ultra-slim fast-charging power supplies.

III. IGBT Gate Drivers

IGBTs are widely used in medium- and high-voltage high-power conversion applications. With moderate switching speeds, they require a stable 15V drive and reliable fault protection, making them suitable for frequency converters and high-power inverter applications. ON Semiconductor’s IGBT drivers include half-bridge, three-phase and isolated single-channel solutions.

Key Features

Standard 15V drive voltage range with wide-voltage UVLO protection;

Support for negative bias variants to suppress IGBT parasitic conduction;

Integrated overcurrent shutdown, soft shutdown and channel interlock to prevent through-conduction;

High-voltage floating bootstrap architecture, supporting bus systems up to 600V; isolated models provide a 5kVrms insulation rating.

Representative models: NCD57000, FAN73896, FOD3120 isolated drivers

Typical applications: industrial variable-frequency drives, UPS (uninterruptible power supplies), high-power welding machines, wind power converters.

IV. General-Purpose FET/MOSFET Gate Drivers (Low-Side, Half-Bridge General-Purpose Silicon MOS)

A general-purpose driver product line designed for silicon power MOSFETs and low-voltage FETs, covering low-voltage load switches and small-to-medium-power switching power supplies. It is divided into two main categories: standalone low-side drivers and high-side/low-side half-bridge drivers.

Key Features

Wide supply voltage range, compatible with 3.3V/5V control logic levels;

A variety of peak drive current specifications, covering small-signal MOSFETs through to high-power switching devices;

Undervoltage lockout and output enable functions, simplifying peripheral protection;

Compact MSOP and SOIC packages, suitable for space-constrained applications.

Representative Models: NCV81071, NCP5104

Typical Applications: BLDC auxiliary power supplies, consumer power supplies, power tools, load switches, battery management systems.

V. H-Bridge MOSFET Driver Solutions (Dedicated to Full-Bridge Topologies)

H-bridge topologies are widely used in forward and reverse control of DC motors, Class D power amplifiers, and bidirectional DC/DC converters. ON Semiconductor’s half-bridge driver ICs can be flexibly cascaded to form a complete H-bridge, whilst providing a native driver solution for full-bridge systems with built-in anti-short-circuit logic.

Key Features

Dual-channel half-bridge architecture; a complete H-bridge can be formed using just two chips;

Configurable dead-time to effectively prevent short-circuiting between the upper and lower switches;

Extended negative voltage tolerance to withstand inductive back-EMF from motors;

Automotive-grade variants support a wide temperature range (-40°C to 140°C), meeting the requirements of automotive actuators.

Representative models: NCP5181, FAN series half-bridge drivers

Typical applications: Automotive water pumps / fans, robotic servo motors, power tools, bidirectional energy storage converters.