company blog about Supply Renesas AT45DB081E-SHN-T DataFlash 8Mbit SPI Serial NOR Flash Memory IC

Supply Renesas AT45DB081E-SHN-T DataFlash 8Mbit SPI Serial NOR Flash Memory IC

[Shenzhen Mingjiada Electronics Co., Ltd.] Long Term Supply (Renesas) AT45DB081E-SHN-T 8Mbit DataFlash——1.7V to 3.6V Range, SPI Serial NOR Flash Memory IC. Below is the product information for AT45DB081E-SHN-T DataFlash:

Part Number: AT45DB081E-SHN-T

Package: SOIC-8

Type: DataFlash——SPI Serial NOR Flash Memory IC

AT45DB081E-SHN-T DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging.

AT45DB081E-SHN-T also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

Product Attributes Of AT45DB081E-SHN-T

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mbit
Memory Organization: 264 Bytes x 4096 pages
Memory Interface: SPI
Clock Frequency: 85 MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

Features Of AT45DB081E-SHN-T

●Single 1.7 V - 3.6 V supply
●Serial Peripheral Interface (SPI) compatible
- Supports SPI modes 0 and 3
- Supports RapidS"M operation
●Continuous read capability through entire array
- Up to 85MHz
- Low-power read option up to 15 MHz
- Clock-to-output time (tv) of 6 ns maximum
●User configurable page size
- 256 bytes per page
- 264 bytes per page (default)
- Page size can be factory pre-configured for 256 bytes
●Two fully independent SRAM data buffers (256/264 bytes)
- Allows receiving data while reprogramming the main memory array
●Flexible programming options
- Byte/Page Program (1 to 256/264 bytes) directly into main memory
- Buffer Write
- Buffer to Main Memory Page Program
●Flexible erase options
- Page Erase (256/264 bytes)
- Block Erase (2 kB)
- Sector Erase (64 kB)
- Chip Erase (8 Mbits)
●Program and Erase Suspend/Resume
●Advanced hardware and software data protection features
- Individual sector protection
- Individual sector lockdown to make any sector permanently read-only
●128-byte, One-Time Programmable (OTP) Security Register
- 64 bytes factory programmed with a unique identifier
- 64 bytes user programmable
●Hardware and software controlled reset options
●JEDEC Standard Manufacturer and Device ID Read
●Low power dissipation
- 400 nA Ultra-Deep Power-Down current (typical)
- 4.5 μA Deep Power-Down current (typical)
- 25 μA Standby current (typical)
- 11 mA Active Read current (typical at 20 MHz)
●Endurance: 100,000 program/erase cycles per page minimum
●Data retention: 20 years
●Complies with full industrial temperature range

AT45DB081E-SHN-T is a 1.7 V minimum, serial-interface sequential access Flash memory ideally suited for a wide variety of digital voice, image, program code, and data storage applications.

AT45DB081E-SHN-T also supports the RapidS serial interface for applications requiring very high speed operation. Its 8,650,752 bits of memory are organized as 4,096 pages of 256 bytes or 264 bytes each.

In addition to the main memory, the AT45DB081E-SHN-T also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data stream. Also, the SRAM buffers can be used as additional system scratch pad memory, and E2PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

AT45DB081E-SHN-T——Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash@ uses a serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The AT45DB081E-SHN-T is optimized for use in many commercial and industrial applications where high-density, low-pin count, low-voltage, and low power are essential.

Key Features Of AT45DB081E-SHN-T

Includes a controllable R/W SRAM buffer for maximum flexibility
Standard block architecture with added 256-byte page erase for energy efficient Data Logging
Byte-write provides Serial EEPROM functionality in a Serial NOR Flash device
Ultra-deep power down operates at >400nA
Extended Vcc operation allows the system memory to operate over the entire voltage range
Comprehensive security and unique ID features protect the device from outside tampering

Block Diagram Of AT45DB081E-SHN-T

Mingjiada Electronics has been supplying Data Flash AT45DB081E-SHN-T SPI Serial NOR Flash IC for a long time. For more information about the memory AT45DB081E-SHN-T, please visit the official website of Mingjiada Electronics (https://www.integrated-ic.com/).