company blog about Supply ROHM Gate Drivers:Isolated Gate Driver,IGBT/MOSFET High/Low Side Gate Driver

Supply ROHM Gate Drivers:Isolated Gate Driver,IGBT/MOSFET High/Low Side Gate Driver

Shenzhen Mingjiada Electronics Co., Ltd. is a renowned distributor of electronic components. With many years of experience in the electronic components sector, we maintain a long-term stock of genuine, in-stock electronic products. Adhering to the principle of ‘serving and benefiting our customers’, we provide a wide range of high-quality electronic components.

Core Supply Advantages

Genuine Product Guarantee: Sourced through authorised factory channels; the entire product range undergoes factory quality inspection upon warehousing; refurbished items, loose new parts or components from dismantled units are strictly excluded; each consignment is accompanied by original factory documentation and specifications; factory traceability is provided to meet mass production quality inspection requirements;

Adequate Stock Levels: Our dual warehouses in Shenzhen and Hong Kong maintain ample stock throughout the year. Samples are dispatched within 1–3 working days; bulk orders are processed and dispatched within 48 hours, effectively resolving customer issues with stock shortages and supply disruptions;

Flexible Procurement Models: We offer three solutions free of charge: small-batch sample testing (engineering prototyping), small-batch trial production, and bulk procurement by reel or pallet, whilst also meeting mass production stocking requirements.

I. Product Overview and Technical Architecture

ROHM, leveraging its proprietary SOI high-voltage integrated circuit process and on-chip transformer isolation technology, has established a comprehensive gate driver product line covering both non-isolated high-side and low-side drivers and isolated drivers. This range is fully compatible with power devices such as silicon-based MOSFETs, IGBTs, third-generation semiconductor SiC MOSFETs and GaN HEMTs, whilst the supported topologies cover mainstream power conversion architectures such as half-bridge, full-bridge, three-phase inverters, synchronous rectification and DC-DC buck-boost converters.

The product line is divided into two main categories based on electrical isolation architecture:

Isolated Gate Drivers (BM61 / BM6GD Series): Featuring an integrated on-chip transformer to achieve complete electrical isolation between the primary control side and the secondary power side. Isolation voltage ratings cover two levels: 2500 Vrms and 3750 Vrms, meeting the UL 1577 insulation standard. This design prevents interference between high- and low-voltage circuits due to the absence of a common ground, making it suitable for high-power, high-safety-level and automotive functional safety applications.

IGBT/MOSFET High-Side / Low-Side Gate Drivers (BM60 / BS / BD Series HVIC): Employing a bootstrap floating-ground architecture, the high-side channel is supplied via a floating-ground power supply utilising a bootstrap diode and bootstrap capacitor, whilst an integrated high-voltage level-shifting circuit transmits 3.3V/5V logic signals to the high-voltage side. The floating-ground withstand voltage ranges from 600V to 1200V; a single chip simultaneously outputs both high-side and low-side drive signals, offering low BOM costs and high integration, and is optimised specifically for half-bridge and three-phase bridge topologies.

II. In-depth Analysis of the Isolated Gate Driver Product Line

1. BM61S Series — Universal Automotive-Grade Isolated Drivers for SiC/IGBT (3750Vrms)

Representative models: BM61S40RFV-C (single-channel), BM61S41RFV-C (dual-channel high-side and low-side)

The BM61S series comprises ROHM’s automotive-grade isolated gate drivers, optimised for third-generation SiC MOSFETs and high-voltage IGBTs. With an isolation withstand voltage of up to 3750Vrms, they are certified to AEC-Q100 Grade 1 automotive standards and support functional safety (FS supportive) analysis. With an output drive capability of ±4A and a secondary-side supply voltage range of 16V to 24V, the series is perfectly matched to the typical 18V drive voltage requirements of third-generation SiC MOSFETs, whilst also being backwards compatible with the 15V drive levels of IGBTs and the 12V drive levels of silicon MOSFETs.

This series of I/O devices features a maximum propagation delay of just 65 ns and a minimum input pulse width of 60 ns, supporting high-frequency switching applications. In terms of protection functions, the device integrates dual under-voltage lock-out (UVLO) on both the input and output sides, output over-voltage protection (OVP) and an active Miller clamp, which forcibly pulls the gate potential down at the moment of shutdown, completely eliminating false triggering of the opposite transistor caused by Miller current. The dual-channel model BM61S41RFV-C can directly drive both the high-side and low-side power devices of a half-bridge configuration from a single chip, eliminating the need for two single-channel isolated drivers and an external isolated power supply, thereby significantly reducing PCB area.

Applications: Designed for automotive main drive inverters, on-board chargers (OBCs) and DC-DC boost converters; Suitable for 1500V photovoltaic string inverters and bidirectional power converters (PCS) for commercial and industrial energy storage; suitable for industrial 1200V SiC power modules.

2. BM61M Series — General-purpose industrial isolated drivers (3750Vrms / 2500Vrms)

Representative models: BM61M41RFV-C (3750Vrms single-channel), BM61M22BFJ-C (2500Vrms single-channel)

The BM61M41RFV-C features an isolation withstand voltage of 3750Vrms and an output drive current of ±4A; secondary-side supply voltage of 9V to 24V, maximum I/O delay of 65ns, minimum input pulse width of 60ns, and features built-in UVLO and active Miller clamping. Housed in an SSOP-B10W package, it is a versatile option for isolating industrial-grade Si MOSFETs and IGBTs.

The BM61M22BFJ-C, on the other hand, is rated at 2500 Vrms isolation, with a maximum I/O delay of 60 ns and a minimum input pulse width of 60 ns. It features built-in low-voltage UVLO protection and is housed in a compact SOP-JW8 package, making it suitable for IGBT and silicon MOSFET gate drivers in space-constrained industrial power supply and inverter designs.

Applications: Suitable for industrial variable-frequency drives, UPS (uninterruptible power supplies), inverter units in welding machines, and general-purpose isolated drivers for switching power supplies.

3. BM6112 Series — Multifunctional Isolated Drivers with Comprehensive Protection (3750 Vrms)

Representative models: BM6112HFV-C, BM6112AFV-C

The BM6112 series is ROHM’s product line of isolated drivers offering the most comprehensive range of protection functions, with an isolation withstand voltage of 3750 Vrms and an I/O delay of 150 ns. This series integrates multiple functions, including fault signal output, ready signal output, under-voltage lock-out (UVLO), short-circuit protection (SCP), active Miller clamping, output status feedback and temperature monitoring (Temp Monitor), making it suitable for high-power IGBT drive applications where reliability and diagnosability are of the utmost importance.

Applications: Suitable for high-power industrial inverters, energy storage converters, and the main control power stages of motor drives.

4. BM6108FV-LB — Negative-voltage-driven multi-function isolated driver (2500 Vrms)

Representative model: BM6108FV-LB

The BM6108FV-LB features an isolation rating of 2500Vrms and an output drive current of ±3A. The secondary side supports bipolar drive outputs ranging from 10V to 24V (positive) and -12V to 0V (negative), enabling reliable switching off of IGBTs and SiC MOSFETs. This model integrates DESAT desaturation short-circuit detection, soft turn-off following short-circuit detection, temperature monitoring and external MOSFET Miller clamping, with UVLO thresholds of 9.05V/9.55V. Housed in an SSOP-B20W package, it provides a highly reliable solution for driving high-power IGBT modules.

Applications: Suitable for driving high-power IGBT modules, industrial motor inverters and centralised photovoltaic inverters.

5. BM6GD Series — Dedicated Isolated Drivers for GaN HEMTs (2500 Vrms)

Representative Model: BM6GD11BFJ-LB

The BM6GD11BFJ-LB is ROHM’s first isolated gate driver optimised for high-voltage GaN HEMTs, with mass production scheduled for 2025. It features an isolation voltage rating of 2500 Vrms, a maximum I/O delay of 60 ns, a minimum input pulse width of 65 ns (a 33 per cent reduction compared to previous products), and supports ultra-high-frequency switching up to 2 MHz.

This model features a design with separate gate charge/discharge pins (independent source and sink pins), allowing the rise and fall edge slopes to be independently adjusted via external resistors, thereby precisely suppressing voltage ringing and EMI during high-frequency GaN switching. Common-mode transient immunity (CMTI) reaches 150 V/ns, 1.5 times that of previous products, effectively preventing false triggering caused by the high switching rates of GaN HEMTs. It features built-in UVLO protection and is housed in an SOP-JW8 package (4.9 mm × 6 mm × 1.65 mm).

Applications: Suitable for high-density server power supplies, high-power industrial fast chargers, AC-DC adaptors, and GaN-based high-frequency power conversion; also suitable for high-voltage power conversion units in humanoid robots.

III. In-depth Analysis of the IGBT/MOSFET High-Side/Low-Side Gate Driver Product Line

1. BM6021x Series — 1200V Automotive-Grade High-Side and Low-Side Drivers

Representative models: BM60212FV-C (with Miller clamping), BM60213FV-C (basic type)

The BM60212FV-C is ROHM’s flagship model in the 1200V high-side/low-side gate driver range. It features a high-side floating supply voltage rating of up to 1200V, is AEC-Q100 automotive-grade certified, and supports functional safety analysis. The supply voltage range is 10V to 24V, with a peak output current of 4.5A (sink) / 3.9A (source). Typical rise and fall times are both 50ns, and the device is compatible with 3.3V and 5V MCU logic inputs.

In terms of protection features, the BM60212FV-C integrates under-voltage lock-out (UVLO) on both the VCCA and VCCB power rails and incorporates an active Miller clamp. Output logic control is achieved via three input signals (EN, INA, INB), providing hardware-level protection against through-short circuits caused by simultaneous conduction of the high-side and low-side. It is housed in an SSOP-B20W package and operates within a temperature range of –40°C to 125°C.

The BM60213FV-C is the basic model in the same series, featuring a 1200V floating-ground withstand voltage, a maximum switching time of 75 ns, a minimum input pulse width of 60 ns, and built-in UVLO; however, it does not include Miller clamping and is currently marked as not recommended for new designs.

Applications: Designed for automotive on-board chargers (OBCs) and on-board inverters; suitable for industrial 1200V IGBT half-bridge circuits, UPS systems and welding machines.

2. BS Series — 600V General-Purpose High-Side/Low-Side Drivers

Representative model: BS2114F

The BS2114F is positioned as a 600V-class general-purpose high-side/low-side gate driver, with a floating-ground withstand voltage of 625V and an output drive current of ±500mA. It integrates a fixed 160ns dead time and power supply UVLO protection, and is housed in a compact SOP8 package, making it the standard choice for cost-sensitive, medium-to-low-power half-bridge applications.

Applications: Suitable for domestic inverters, small-scale photovoltaic micro-inverters and 48V energy storage DC-DC converters.

3. BD Series — Single-Channel Low-Side and Three-Phase Integrated Drivers

Representative models: BD2310G (single-channel low-side), BD2320UEFJ-LA (automotive-grade single-channel), BD67871MWV-Z (three-phase integrated)

The BD2310G is a single-channel gate driver with a pure low-side architecture, delivering an output drive of ±4A, with a VCC supply voltage of 4.5V to 18V and logic inputs of 2.0V to 5.5V. It achieves a switching speed of 15ns and is housed in an ultra-compact SSOP5 package, making it suitable for low-voltage synchronous rectification and auxiliary switching of low-side power transistors.

The BD2320UEFJ-LA is an automotive-grade single-channel driver with an output of +3.5A/-4.5A and a supply voltage range of 7.5V to 14.5V. It is housed in an HTSOP-J8 package and meets the reliability requirements for automotive environments.

The BD67871MWV-Z is a three-phase integrated high-side/low-side driver. It integrates three half-bridge circuits—totalling six drive channels—on a single chip, with a supply voltage range of 4.5V to 60V. Equipped with ROHM’s proprietary TriC3™ active gate current regulation technology, it dynamically adjusts the gate drive current to simultaneously reduce switching losses and EMI ringing. It incorporates a comprehensive suite of protection features, including dead-time control, overcurrent protection, under-voltage lockout and thermal shutdown, making it a highly integrated solution for three-phase BLDC motor drives.

Applications: The BD2310G is suitable for low-voltage synchronous rectification and the drive of power switching devices in humanoid robot auxiliary power supplies; the BD67871MWV-Z is suitable for industrial BLDC motors, power tools and joint servo drives in humanoid robots.

IV. Analysis of Core Functions Across the Entire Series

Active Miller Clamp: The Miller capacitance-coupled current generated at the moment of IGBT and SiC MOSFET turn-off can easily cause the opposite-side power device to turn on unintentionally, resulting in a half-bridge short circuit. ROHM’s entire range of mid- to high-end gate drivers features a dedicated Miller clamp pin, which forcibly pulls the gate to a low potential upon turn-off, completely eliminating Miller-induced false triggering and significantly enhancing the long-term operational reliability of half-bridge and three-phase bridge topologies.

Dual UVLO (Undervoltage Lockout): The non-isolated high-side and low-side series feature independent undervoltage detection on the high-side and low-side drive power supplies respectively; when voltage is insufficient, the output is locked out to prevent power devices from overheating and burning out whilst operating in the linear region. The isolated series features dual UVLO on both the primary-side control side and the secondary-side power side; should the voltage on either side become abnormal, the driver is immediately switched off and a fault flag is output.

Wide logic level compatibility: The entire series supports 3.3V/5V standard MCU logic at the input, whilst low-voltage models are compatible with 2V inputs, allowing direct interfacing with mainstream microcontrollers such as ST’s STM32, Renesas’ RA and TI’s C2000, without the need for additional level-shifting chips.

Wide temperature range coverage: Industrial-grade operating temperature range of –40°C to 105°C; automotive-grade AEC-Q100 Grade 1 range of –40°C to 125°C, covering demanding operating conditions such as outdoor photovoltaic systems, automotive electric drives, industrial servo systems and humanoid robots operating continuously for extended periods.

Short-circuit protection and soft shutdown: High-end isolated models (such as the BM6108FV-LB) incorporate DESAT (Desaturation Short-Circuit Detection), which executes a soft shutdown sequence when the IGBT experiences overcurrent, thereby suppressing collector spike voltages and protecting power devices from overvoltage breakdown.