company blog about Supply ROHM SiC Power Devices:SiC Power Module,SiC MOSFETs,SiC Schottky Barrier Diodes

Supply ROHM SiC Power Devices:SiC Power Module,SiC MOSFETs,SiC Schottky Barrier Diodes

Shenzhen Mingjiada Electronics Co., Ltd. is a renowned distributor of electronic components. Adhering to the principle of ‘serving and benefiting our customers’, we offer a comprehensive range of high-quality electronic components.

[Supply Advantages]

1. Comprehensive product range covering all application scenarios

Extensive core product range: We specialise in 5G, new energy, the Internet of Things (IoT), automotive-grade, communications and AI integrated circuits, whilst also covering memory, sensors, microcontrollers, Field-Programmable Gate Arrays (FPGAs), transceivers, Wi-Fi/Bluetooth wireless modules and connectors.

Precise Grading and Matching: We offer general-purpose, low-power, automotive-grade (AEC-Q100, ASIL-B/D functional safety) and industrial-grade (wide temperature range from -40°C to 125°C) products, serving diverse application scenarios such as home appliances, in-vehicle electronics, industrial control, medical equipment and smart wearable devices.

2. Rigorous Quality Control and Traceability

All products are sourced through official channels and come with original manufacturer certification and comprehensive quality traceability reports, ensuring the elimination of counterfeit and substandard products. Automotive-grade and industrial-grade products have all passed relevant industry standard tests (such as AEC-Q100).

Professional quality inspection process: 100% incoming inspection + pre-shipment re-inspection to ensure batch consistency and reliability.

3. Ample Stock and Flexible Delivery

Our extensive stock supports both single-unit sample orders and high-volume production requirements. We offer supplier-managed inventory and long-term supply agreements.

Standard orders are dispatched within 24 hours; urgent orders are responded to within 4 hours; next-day delivery is available in major regions. Our dual-warehouse network in Hong Kong and Shenzhen enables rapid global fulfilment.

4. Flexible Pricing and Services to Meet Diverse Needs

Volume purchasing offers cost advantages, whilst tiered pricing and long-term price protection mechanisms help customers manage their expenditure.

Value-added services include one-stop Bill of Materials (BOM) matching, alternative component recommendations, technical consultancy and obsolete stock management, effectively reducing procurement and design risks.

Through a hybrid distribution model combining authorised and unauthorised channels, we can rapidly source niche, discontinued or scarce components.

I. ROHM SiC Power Modules: Fully Integrated Silicon Carbide, Empowering High-Power, High-Efficiency Applications

SiC power modules are the high-end core products within ROHM’s SiC product portfolio and serve as the core components of high-power systems. Unlike traditional silicon IGBT modules and hybrid silicon carbide modules, ROHM has pioneered the large-scale mass production of all-SiC power modules. The modules utilise an architecture comprising exclusively SiC MOSFET and SiC SBD chips, thereby completely overcoming the performance bottlenecks associated with silicon-based devices and achieving comprehensive upgrades in terms of loss, frequency and temperature characteristics.

In terms of core performance, ROHM’s SiC power modules offer exceptionally low losses. Compared to traditional silicon IGBT modules, their switching losses are significantly reduced, whilst they are free from tail current issues; their energy efficiency advantages are particularly pronounced under high-frequency operating conditions. For key applications such as on-board inverters in new energy vehicles, high-power converters for photovoltaic and wind power systems, industrial servo drives and energy storage converters, ROHM’s SiC power modules can effectively reduce system operating losses. Test results show that they can help on-board inverters achieve energy consumption optimisation of around 6 per cent, significantly improving vehicle range and power generation efficiency.

In terms of product design and reliability, ROHM has resolved the thermal management bottlenecks and electromagnetic interference issues associated with high-power modules by optimising chip layout, packaging processes and thermal management structures. The modules exhibit excellent high-temperature stability, with no significant degradation in conduction losses or switching characteristics under high-temperature conditions, and are suitable for a wide operating temperature range of –40°C to 175°C. Furthermore, the product’s higher level of integration simplifies the design of system peripheral circuits and reduces the number of passive components, facilitating smaller and lighter equipment designs. It is perfectly suited to the demanding conditions of industrial and automotive applications characterised by high power, high frequency and high reliability.

Currently, ROHM’s SiC power modules cover a wide range of voltages and power ratings, meeting the diverse needs of applications ranging from small- to medium-power industrial equipment to megawatt-class renewable energy generation systems, and serve as a core solution for upgrading high-end power systems.

II. ROHM SiC MOSFETs: Four Generations of Technological Evolution, Creating the Core of Ultra-Low-Loss Switching

SiC MOSFETs are the core switching devices in high-frequency power conversion systems. Through multiple generations of technological evolution, ROHM has established an industry-leading SiC MOSFET product portfolio. The company is currently focusing on the mass production of its fourth-generation SiC MOSFETs, which achieve an optimal balance between on-resistance, switching losses and short-circuit withstand capability, placing their overall performance among the industry’s top tier.

Compared to traditional silicon MOSFETs, ROHM’s SiC MOSFETs offer revolutionary performance advantages. Whilst silicon-based MOSFETs have a maximum breakdown voltage of just 1,000 V, ROHM’s SiC MOSFETs are available in voltage ratings of up to 3,000 V, making them exceptionally well-suited to high-voltage applications. Furthermore, thanks to the high breakdown electric field strength of SiC, they maintain an extremely low specific on-resistance even at high voltage ratings, thereby completely resolving the long-standing issue with traditional high-voltage silicon devices where ‘higher voltage ratings result in greater on-resistance losses’. Furthermore, the switching process of SiC MOSFETs is free from minority carrier storage effects and does not suffer from current tailing issues. Their switching speed far exceeds that of silicon-based devices, enabling high-frequency operation at several hundred kHz and significantly enhancing system power density.

ROHM’s fourth-generation SiC MOSFETs are flagship products; by optimising the UMOS structure and chip manufacturing process, they achieve an industry-leading ultra-low on-resistance whilst significantly extending short-circuit withstand time, thereby enhancing the device’s operational stability and safety. This product series features an optimised gate-drain capacitance (Qgd), reducing switching losses by 50% compared to previous generations. It also supports a standard gate drive voltage of 15 V, ensuring compatibility with traditional silicon device drive solutions and thereby reducing system upgrade and retrofit costs.

Thanks to their outstanding overall performance, ROHM’s SiC MOSFETs are widely used in applications such as electric vehicle main drive inverters, on-board chargers, high-end industrial power supplies, high-frequency photovoltaic inverters and energy storage equipment. They not only improve the energy efficiency of equipment but also, through high-frequency designs, reduce equipment size and lower heat dissipation costs, thereby contributing to the lightweight and energy-efficient upgrades of end products.

III. ROHM SiC Schottky Barrier Diodes (SiC SBDs): High-Speed, Low-Loss, Suitable for High-Frequency Rectification Applications

SiC Schottky barrier diodes (SiC SBDs) are core components in power rectification circuits. ROHM has specialised in this field for many years, launching multiple generations of products; the third-generation SCS3 series is currently the flagship product, effectively addressing the industry pain points associated with traditional silicon fast recovery diodes (FRDs), such as high reverse recovery losses, high-frequency noise and poor temperature drift characteristics.

Conventional silicon fast recovery diodes exhibit significant reverse recovery current and recovery time; when operating at high frequencies, they generate substantial switching losses and electromagnetic interference, whilst their performance deteriorates significantly under high-temperature conditions. In contrast, ROHM’s SiC SBDs, leveraging the properties of SiC material, feature near-zero reverse recovery characteristics, with significantly optimised reverse recovery current and recovery time. They exhibit extremely low losses under high-frequency rectification conditions, whilst effectively suppressing switching noise and reducing the complexity of system EMI design.

In terms of performance stability, the electrical characteristics of ROHM’s SiC SBDs are virtually unaffected by operating current and temperature; the forward voltage drop, reverse leakage current and recovery characteristics remain stable across a wide temperature range, completely eliminating the issue of performance degradation at high temperatures associated with silicon-based diodes. The third-generation SCS3 series has further optimised the chip structure through iterative development. Whilst reducing the forward voltage and conduction losses, it has significantly enhanced surge current withstand capability, thereby improving the device’s shock resistance and operational reliability.

The product range covers medium- and high-voltage specifications of 600 V and above, far exceeding the voltage withstand limits of traditional silicon Schottky diodes. It is fully compatible with high-frequency rectification applications such as power factor correction (PFC) circuits, inverter rectifier circuits, switching power supplies, new energy charging equipment and industrial variable-frequency equipment, helping end devices achieve efficient rectification, cost reduction, noise reduction and miniaturised designs.