company blog about [Supply Silicon Carbide MOSFETs] C3M0016120D 1.2kV 15mOHMS G3 SiC MOSFETs

Shenzhen Mingjiaoda Electronics Co., Ltd [Supply Silicon Carbide MOSFET] Imported Original C3M0016120D 1.2kV 15mOHMS G3 SiC MOSFET Through Hole N Channel 1200 V 115A(Tc) 556W(Tc) TO-247-3

Product Description:

Wolfspeed SiC C3M MOSFETs enable higher switching frequencies and reduced device size for inductors, capacitors, filters, and transformers. SiC C3M MOSFETs offer higher system efficiency and lower cooling requirements. The MOSFETs also increase power density and system conversion frequency.

C3M0016120D A silicon carbide power MOSFET C3MTM MOSFET technology N-channel enhancement mode.

Product Specifications:

Manufacturer:Wolfspeed

Product Category: Silicon Carbide MOSFETs

Channel Mode: Enhancement

Configuration: Single

Dropout Time: 27 ns

Forward transconductance - min: 53 S

Id-continuous drain current: 115 A

Maximum operating temperature: + 175 C

Minimum Operating Temperature: - 40 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-247-3

Pd-Power Dissipation: 556 W

Product type: SiC MOSFETS

Qg-Gate charge: 207 nC

Rds On-drain on-resistance: 22.3 mOhms

Rise time: 28 ns

Factory Package Quantity: 30

Subcategory: Transistors

Technology: SiC

Transistor polarity: N-Channel

Typical Off Delay Time: 84 ns

Typical turn-on delay time: 174 ns

Vds - drain-source breakdown voltage: 1.2 kV

Vgs - gate-source voltage: - 8 V, + 19 V

Vgs th - gate-source threshold voltage: 1.8 V

Unit weight: 6 g

If you are interested, please call Mr Chen:

Tel: +86 134101018555

Email: sales@hkmjd.com

Company homepage: www.hkmjd.com