company blog about Supply ST Low Side Switch IC, Supply VND5N07TR OMNIFET II Series Fully Autoprotected Power MOSFET

Supply ST Low Side Switch IC, Supply VND5N07TR OMNIFET II Series Fully Autoprotected Power MOSFET

VND5N07TR OMNIFET II: Fully Automatic Protection Power MOSFET Low-Side Switch Solution

VND5N07TR Product Overview and Key Features:
The VND5N07TR is a single-channel intelligent power switch based on STMicroelectronics' VIPower M0-3 technology, packaged in a DPAK (TO-252-3) surface-mount package. The VND5N07TR integrates an N-channel power MOSFET, drive logic, and comprehensive protection functionality modules, enabling direct replacement of traditional MOSFET solutions.

The innovative feature of the VND5N07TR lies in its ‘self-protection’ architecture, which enables multiple fault protection without the need for external monitoring circuits, significantly simplifying system design.

The VND5N07TR device operates within a temperature range of -40°C to +150°C and complies with the AEC-Q101 automotive-grade certification standard, ensuring stable operation in harsh environments.

The VND5N07TR's packaging design optimises thermal performance, with a power dissipation capability of 60W, enabling it to handle high-impact current loads. The VND5N07TR product is packaged in tape and reel (TR) format, making it suitable for automated SMT production lines and enhancing large-scale manufacturing efficiency.

VND5N07TR Detailed Technical Specifications
The VND5N07TR achieves a precise balance in electrical performance, meeting high power handling requirements while maintaining low loss characteristics. The following are the core technical parameters of the VND5N07TR:
Voltage Characteristics
Load Voltage: 55V
Drain-Source Breakdown Voltage: 70V

Current Characteristics
Continuous Output Current: 3.5A
Peak Output Current: 5.0A
Current Limit Threshold: 5.0A
Conduction Characteristics
Conduction Resistance: 200mΩ

Gate Charge: 18nC
Switching Characteristics
Typical Turn-On Delay Time: 50-150ns
Typical Turn-Off Delay Time: 150-3900ns
Thermal Performance
Power Dissipation: 60W
Operating Junction Temperature: -40~+150°C

The typical on-resistance of the VND5N07TR is only 200 mΩ (maximum), resulting in on-resistance power dissipation of just 5 W under a 5 A load condition, significantly reducing system thermal management complexity. The switching timing of the VND5N07TR device has been optimised, with a rise time of 60–400 ns and a fall time of 40–1100 ns, balancing switching losses with EMI performance.

Notably, the VND5N07TR product uses non-inverting input logic (high-level activation), supporting direct drive at 3V to 5V CMOS/TTL levels without requiring additional level conversion circuits. Its static current is extremely low, making it particularly suitable for battery-powered applications

VND5N07TR Block Diagram:

VND5N07TR is a monolithic device designed using STMicroelectronics®VIPower®M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. VND5N07TR Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. VND5N07TR Fault feedback can be detected by monitoring the voltage at the input pin.

【Mingjiada Electronics】has been supplying ST (VND5N07TR) OMNIFET II™ series fully automatic protection power MOSFETs for a long time. For more product information about VND5N07TR or price inquiries, please visit the Mingjiada Electronics official website (https://www.integrated-ic.com/) for details.