company blog about Supply ST Power Transistors:IGBT,Power Bipolar,Power MOSFETs,GaN,SiC MOSFETs

Supply ST Power Transistors:IGBT,Power Bipolar,Power MOSFETs,GaN,SiC MOSFETs

Shenzhen Mingjiada Electronics Co., Ltd., a globally renowned authorised independent distributor of electronic components, remains steadfast in its commitment to delivering premium product solutions to customers worldwide.

Our core product portfolio encompasses: 5G chips, new energy ICs, IoT ICs, Bluetooth ICs, telematics ICs, automotive-grade ICs, communications ICs, AI ICs, memory ICs, sensor ICs, microcontroller ICs, transceiver ICs, Ethernet ICs, WiFi chips, wireless communication modules, connectors, and other electronic components.

Application Fields: Our products are extensively utilised across numerous sectors including automotive, communication equipment, computing, consumer electronics, medical instruments, audio equipment, video display instruments, communication systems, and automotive power supplies.

Service Philosophy: Upholding the principle of ‘serving customers and delivering value,’ we provide clients with diverse, high-quality electronic components.

【IGBTs】

Breakdown voltages from 300 to 1700 V. Low VCE(SAT) for reduced conduction losses. Improved switch-off energy spread versus increasing temperature.

Product types

ST offers an extensive range of Power IGBTs for any voltage range in industrial and automotive applications.

STPOWER 300-400 V (clamped) IGBTs

Used as coil drivers for high-performance car ignition systems, these IGBTs are available in different clamp voltages (with typical values ranging from 350 to 410 V) and current levels ( from 10 to 30 A).

STPOWER 600-750 V IGBTs

ST 600, 650, and 750 V IGBTs supply a maximum collector current range up to 320 A for applications with an operating frequency up to 100 kHz.

STPOWER 1200-1350 V IGBTs

ST IGBTs with a voltage rating greater than or equal to 1200 V, for a maximum current ranging from 3 to 75 A in different discrete packages for applications with an operating frequency up to 100 kHz.

STPOWER IGBTs bare die up to 1700 V

Bare die IGBTs are available in different trade-offs, with a maximum voltage of 1700 V and a collector current up to 200 A, for a wide range of applications like motor control, servo drives, welding, solar, and traction inverters for industrial and automotive applications.

【Power Bipolar】

A wide range that includes Darlington transistors and BJTs with a VCES from 15 to 1700 V.

Key features of ST's bipolar NPN / PNP transistors

Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses

Integrated diode versions for reduced component count

Well-controlled hFE parameter for increased reliability

Best cost-performance ratio

【Power MOSFETs】

Broad range of breakdown voltages from -100 to 1700 V, with low gate charge and low on-resistance, combined with state-of-the-art packaging.

Product types

ST offers an impressive range of Power MOSFETs for any voltage range in industrial and automotive applications, such as switch mode power supplies (SMPS), lighting, motor control, energy generation & electro mobility, chassis & safety, and body & convenience.

20V-30V low-voltage MOSFETs

Discover our STripFET low-voltage power MOSFETs, with low gate charge and low on-resistance, combined with appropriated package solution.

STPOWER N-channel MOSFETs > 30V to 200V

Discover our medium-voltage STripFET N-channel power MOSFET porfolio, available in a wide range of miniature and high-power packages.

STPOWER N-channel MOSFETs > 200V to 700V

ST's latest super-junction technology tailored for both hard switching and resonant topologies, suitable for high power applications.

> 700V-1700V HV and VHV MOSFETs

Discover our MDmesh high voltage and very high voltage power MOSFETs, with enhanced power-handling capability, resulting in high-efficiency solutions.

P-channel MOSFETs

Discover our STripFET P-channel MOSFETs, available in very small form factor packages and recently enlarged with new trench-gate devices.

【GaN transistors】

GaN technolopgy excels in high-frequency applications, offering superior efficiency, high power density, and extremely fast switching.

【SiC MOSFETs】

From 650 to 2200 V, SiC MOSFETs enhance power efficiency, enable more compact and lighter systems, and are ideal for high-voltage, high-performance applications.

The main features of our SiC MOSFETs include:

Automotive-grade (AG) qualified devices

Very high temperature handling capability (max. TJ = 200 °C)

Very high switching frequency operation and very low switching losses

Low on-state resistance

Gate drive compatible with existing ICs

Very fast and robust intrinsic body diode