company blog about Supply STMicroelectronics Power Transistors STL33N60DM2 MOSFET N-Channel 600 V, 0.115 Ohm Typ.

Shenzhen Mingjiada Electronics Co., Ltd Supply STMicroelectronics STL33N60DM2 N-channel FDmesh II Plus™ Power MOSFETs, Brand New & Original, Quality Assurance!

Model No: STL33N60DM2

Series: MDmesh™ DM2

Product Status: On Sale

FET Type: N-Channel

Technology: MOSFET (Metal Oxide)

Drain-Source Voltage (Vdss): 600 V

Current at 25°C - Continuous Drain (Id): 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On): 10V

On-resistance (max) at different Id, Vgs: 140 mOhm @ 10.5A, 10V

Vgs(th) at different Id (max): 5V @ 250µA

Gate Charge (Qg) (Max) at Vgs: 43 nC @ 10 V

Vgs (max): ±25V

Input capacitance (Ciss) at varying Vds (max): 1870 pF @ 100 V

Power Dissipation (Max): 150W (Tc)

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: PowerFlat™ (8x8) HV

Package/Housing: 8-PowerVDFN

Introduction

ST's MDmesh DM2 series is ST's newest family of fast recovery diodes, 600V power MOSFETs, especially suited for ZVS phase-shift bridge topologies. They have a very small recovery charge and time (Qrr, trr) and a 20% lower RDS(on) (compared to the previous generation). High dV/dt strength (40V/ns) ensures higher system reliability.

Features

• Low gate charge and input capacitance
• Lower RDS(on) x area compared to the previous generation
• Low gate input resistance
• Designed for switching applications
• 100% avalanche tested
• Zener protected
• High dv/dt and avalanche capability

For further information, please contact Mr Chen by phone:

Tel: +86 13410018555

Email: sales@hkmjd.com

Website: www.hkmjd.com