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Shenzhen Mingjiada Electronics Co., Ltd (Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTs
Description
Infineon CoolGaN™ Gallium Nitride HEMTs offer a number of advantages including ultra-high efficiency, reliability, power density, and very high mass relative to silicon.CoolGaN transistors are based on an extremely reliable technology and are designed to achieve ultra-high efficiency and power density in switch-mode power supplies. These devices operate in a manner similar to conventional silicon MOSFETs with p-GaN gate structures and enhanced mode gate drive biasing.
Infineon CoolGaN's superior quality makes it ideally suited for both hard and soft switching topologies. coolGaN supports the tuning of simpler half-bridge topologies for PFC, including the elimination of lossy input bridge rectifiers. coolGaN HEMTs provide power semiconductor devices with higher critical electric fields for superior high-speed switching.
Features
Applications
If you have any request, please call Mr Chen:
Tel: +86 13410018555
Email: sales@hkmjd.com
Company website: www.hkmjd.com