company blog about (Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTs

Shenzhen Mingjiada Electronics Co., Ltd (Supply) Transistors IGT60R070D1ATMA4 and IGO60R070D1AUMA1 CoolGaN™ Gallium Nitride HEMTs

Description

Infineon CoolGaN™ Gallium Nitride HEMTs offer a number of advantages including ultra-high efficiency, reliability, power density, and very high mass relative to silicon.CoolGaN transistors are based on an extremely reliable technology and are designed to achieve ultra-high efficiency and power density in switch-mode power supplies. These devices operate in a manner similar to conventional silicon MOSFETs with p-GaN gate structures and enhanced mode gate drive biasing.

Infineon CoolGaN's superior quality makes it ideally suited for both hard and soft switching topologies. coolGaN supports the tuning of simpler half-bridge topologies for PFC, including the elimination of lossy input bridge rectifiers. coolGaN HEMTs provide power semiconductor devices with higher critical electric fields for superior high-speed switching.

Features

• Quality factor for 600V power devices
• Ideal for hard and soft switching topologies
• Up to three times higher power density
• Optimised turn-on and turn-off modes
• Technology for innovative solutions and large capacities
• Ultra-high efficiency of SMPS
• Surface mount package ensures full access to GaN switching capability
• Varied portfolio of driver ICs for ease of use

Applications

• Servers
• Telecommunications
• Wireless charging
• Adapters and chargers

If you have any request, please call Mr Chen:

Tel: +86 13410018555

Email: sales@hkmjd.com

Company website: www.hkmjd.com