company blog about WeEn WNSC2D401200CW Dual Silicon Carbide Schottky Diode For High Frequency Switched-Mode Power Supplies

WeEn WNSC2D401200CW Dual Silicon Carbide Schottky Diode For High Frequency Switched-Mode Power Supplies

Shenzhen Mingjiada Electronics Co., Ltd, as a leading company in the electronic components supply industry, is a long-term supplier of WNSC2D401200CW dual-channel silicon carbide Schottky diodes for high-frequency switching power supplies. As an important member of the Silicon Carbide (SiC) power device family, WNSC2D401200CW is becoming one of the preferred devices for high-efficiency power electronic system design due to its excellent high-frequency performance, very low reverse recovery loss, and high-temperature operating capability.

Product Overview Of WNSC2D401200CW
The WNSC2D401200CW is a dual-channel silicon carbide Schottky diode from WeEn Semiconductor, optimised for high-frequency switching power supply applications.The WNSC2D401200CW is based on advanced silicon carbide material technology and features 1200V reverse repetitive peak voltage (VRRM) and 40A continuous forward current (IF) capability, and maintains excellent electrical performance in high temperature environments. still maintains excellent electrical performance in high temperature environments.

The biggest advantage of the WNSC2D401200CW over conventional silicon-based Schottky diodes is its near-zero reverse recovery characteristics. In hard-switching applications, conventional silicon diodes generate significant reverse-recovery currents at turn-off, resulting in additional switching losses and EMI noise. The WNSC2D401200CW silicon carbide Schottky diode, however, fundamentally eliminates this phenomenon based on the physical properties of wide bandwidth semiconductor materials, allowing systems to operate at higher frequencies without sacrificing efficiency.

The WNSC2D401200CW's dual-channel design provides increased design flexibility for power supply topologies. Engineers can use the two independent diodes for interleaved PFC circuits, dual-switch forward converters, or half/full bridge rectification applications, simplifying system thermal management with a shared heatsink.The TO-247-3L package features an industry-standard pinout arrangement that is compatible with existing designs, allowing for easy device replacement and performance upgrades for customers.

Key parameters Of WNSC2D401200CW
Voltage and current specifications: VRRM=1200V, IF=40A (continuous), IFSM=120A (surge)
Conduction characteristics: Typical forward voltage drop VF=1.7V (@IF=20A, TJ=25°C)
Switching performance: Nearly zero reverse recovery charge (Qrr<30nC), significantly reduced switching losses
Thermal Characteristics: Operating junction temperature range -55°C to +175°C, thermal resistance RθJC=0.5°C/W
Package: TO-247-3L dual-channel package, optimised thermal design

Technical Advantages Of WNSC2D401200CW
The WeEn WNSC2D401200CW Silicon Carbide Schottky diode represents the cutting-edge development of power semiconductor technology, and its technological advantages are not only reflected in a single parameter, but also in the overall performance enhancement it brings to power electronic systems. The WNSC2D401200CW device provides significant value to designers in three dimensions: efficiency, power density and reliability.

Efficiency Improvement:
Ultra-low switching losses: Qrr <30nC enables switching frequencies to be increased to hundreds of kHz without significant loss increase, reducing switching losses by more than 80% compared to silicon-based fast recovery diodes.
High-temperature stability: WNSC2D401200CW has a VF drift of less than 15% at 175°C, compared to the 30% or more performance degradation typically associated with silicon devices.
Optimised conduction losses: positive temperature coefficient VF characteristics allow multiple devices to be used in parallel for natural current balancing

Power Density Improvement:
The WNSC2D401200CW's high-frequency capability allows the use of smaller passive components (inductors, capacitors, transformers), reducing system size by 30-50%.
Dual-channel integrated design saves PCB space and simplifies layout
Excellent thermal performance reduces heat sink size requirements

Enhanced reliability:
Inherent high critical breakdown field strength of silicon carbide material (2-4MV/cm, 5-10 times higher than silicon) ensures stable operation under high voltage.
WNSC2D401200CW is radiation resistant and suitable for aerospace and other harsh environments.
No conductive modulation effect, avoiding failure modes due to dynamic avalanche

Applications Of WNSC2D401200CW
Server power supplies and data centre power supply systems: WNSC2D401200CW uses SiC diodes in 80Plus Titanium power supplies, enabling the efficiency of the entire machine to exceed 96%, significantly reducing operating power costs
Electric Vehicle On-Board Charger (OBC): WNSC2D401200CW meets the demand for high power density while withstanding the high temperature environment in the engine compartment.
Solar photovoltaic inverters: MPPT efficiency increased by 1-2 percentage points, extending power generation time
Industrial Motor Drive: High frequency switching reduces current ripple, motor heat and noise.
Wireless charging system: MHz class operating frequency to achieve smaller transmitter and receiver coils.

Typical application circuits Of WNSC2D401200CW
Interleaved boost PFC: Two channels are used in two-phase interleaved circuits to reduce input current ripple while sharing heat sinks
LLC resonant converter: WNSC2D401200CW is used as a parallel device for synchronous rectifier to reduce conduction loss
Three-phase full-bridge rectifier: three devices form a six-channel system for high-power AC/DC conversion
Bi-directional DC/DC converter: Highly efficient bi-directional energy flow using low Qrr characteristics of SiC diodes