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LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers

LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers
LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers

Large Image :  LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: LMG3422R030RQZR
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Original Factory
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers

Description
Output Current: 1.2 A Supply Voltage - Min: 7.5 V
Supply Voltage - Max: 18 V Rise Time: 4 Ns
Product Type: Gate Drivers Rds On - Drain-Source Resistance: 30 MOhms
Highlight:

LMG3422R030RQZR GaN FET

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GaN FET 600V

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600V Integrated Isolated GaN Gate Drivers

GaN IC LMG3422R030RQZR 600V 30mΩ GaN FET With Integrated Driver Isolated Gate Drivers

 

Description

LMG3422R030RQZR GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

 

LMG3422R030RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. Integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with lowinductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes ideal diode mode, which reduces thirdquadrant losses by enabling adaptive dead-time control.

 

Specifications

Type: Inverting, Non-Inverting Package : VQFN-54
Supply Voltage: 7.5 V - 18 V Operating Temperature: -40°C ~ 125°C
Rise Time: 2.5 Ns Fall Time: 21 Ns

 

Features

  • Qualified for JEDEC JEP180 for hard-switching topologies
  • 600-V GaN-on-Si FET with Integrated gate driver
  • Integrated high precision gate bias voltage
  • 200-V/ns CMTI
  • 2.2-MHz switching frequency
  • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
  • Operates from 7.5-V to 18-V supply
  • Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
  • Withstands 720-V surge while hard-switching
  • Self-protection from internal overtemperature and UVLO monitoring
  • Digital temperature PWM output
  • Ideal diode mode reduces third-quadrant losses in LMG3425R030

 

Applications

  • High density industrial power supplies
  • Solar inverters and industrial motor drives
  • Uninterruptable power supplies
  • Merchant network and server PSU

 

Pin Configuration and Functions

LMG3422R030RQZR GaN FET 600V Integrated Isolated GaN Gate Drivers 0

 

 

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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