LMG3425R030RQZR Gan Fet Gate Driver VQFN54 Integrated Half Bridge Gan Driver
Description
Configuration:
Inverting, Non-Inverting
Package / Case:
VQFN-54
Supply Voltage:
7.5 V - 18 V
Operating Temperature:
-40°C ~ 125°C
Rise Time:
2.5 Ns
Fall Time:
21 Ns
Highlight:
LMG3425R030RQZR Gan Fet Gate Driver
,
Gan Fet Gate Driver VQFN54
,
VQFN54 Integrated Half Bridge Gan Driver
Gate Drivers LMG3425R030RQZR GaN FET with integrated driver and ideal diode mode VQFN54
Description
LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R030 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.
Specifications
Driver ICs - Various
High-Side, Low-Side
SMD/SMT
VQFN-54
1 Driver
1 Output
7.5 V
18 V
Inverting, Non-Inverting
2.5 ns
21 ns
- 40 C
+ 125 C
Applications
High density industrial power supplies
Solar inverters and industrial motor drives
Uninterruptable power supplies
Merchant network and server PSU
Merchant telecom rectifiers
Features
Qualified for JEDEC JEP180 for hard-switching
topologies
•
600
-V GaN-on-Si FET with Integrated gate driver
–
Integrated high precision gate bias voltage
–
200-V/ns CMTI
–
2.2
-MHz switching frequency
–
30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
–
Operates from 7.5-V to 18-V supply
•
Robust protection
–
Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
–
Withstands 720-V surge while hard-switching
–
Self-protection from internal overtemperature
and UVLO monitoring
•
Advanced power management
–
Digital temperature PWM output
–
Ideal diode mode reduces third-quadrant losses
in
LMG3425R030
Qualified for JEDEC JEP180 for hard-switching topologies
600-V GaN-on-Si FET with Integrated gate driver
Integrated high precision gate bias voltage
200-V/ns CMTI
2.2-MHz switching frequency
30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
Operates from 7.5-V to 18-V supply
Robust protection
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
Withstands 720-V surge while hard-switching
Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
Digital temperature PWM output
Ideal diode mode reduces third-quadrant losses in LMG3425R030
Measurement to Determine Propagation Delays and Slew Rates
Qualified for JEDEC JEP180 for hard-switching
topologies
•
600
-V GaN-on-Si FET with Integrated gate driver
–
Integrated high precision gate bias voltage
–
200-V/ns CMTI
–
2.2
-MHz switching frequency
–
30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
–
Operates from 7.5-V to 18-V supply
•
Robust protection
–
Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
–
Withstands 720-V surge while hard-switching
–
Self-protection from internal overtemperature
and UVLO monitoring
•
Advanced power management
–
Digital temperature PWM output
–
Ideal diode mode reduces third-quadrant losses
in
LMG3425R030
Qualified for JEDEC JEP180 for hard-switching
topologies
•
600
-V GaN-on-Si FET with Integrated gate driver
–
Integrated high precision gate bias voltage
–
200-V/ns CMTI
–
2.2
-MHz switching frequency
–
30-V/ns to 150-V/ns slew rate for optimization
of switching performance and EMI mitigation
–
Operates from 7.5-V to 18-V supply
•
Robust protection
–
Cycle-by-cycle overcurrent and latched short-
circuit protection with < 100-ns response
–
Withstands 720-V surge while hard-switching
–
Self-protection from internal overtemperature
and UVLO monitoring
•
Advanced power management
–
Digital temperature PWM output
–
Ideal diode mode reduces third-quadrant losses
in
LMG3425R030
FAQ Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
