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LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated

LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated
LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated

Large Image :  LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: LMG3425R050RQZR
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Original Factory
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated

Description
Operating Temperature: -40°C ~ 125°C (TJ) Supply Voltage: 7.5 V ~ 18 V
Rise Time: 2.5 Ns Fall Time: 21 Ns
Configuration: Non-Inverting Product Type: Gate Drivers
Highlight:

LMG3425R050RQZR Gan Mosfet Driver

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Gan Mosfet Driver Silicon

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Gan Fet Drivers Integrated

Silicon Driver LMG3425R050RQZR Gate Drivers GaN FET With Integrated Driver

 

Description

LMG3425R050RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI's low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3425R050 includes ideal diode mode, which reduces third-quadrant losses by enabling adaptive dead-time control.

 

Specifications

Operating Temperature:

-40°C ~ 125°C (TJ)

Supply Voltage:

7.5 V ~ 18 V

Rise Time:

2.5 Ns

Fall Time:

21 Ns

Configuration:

Non-Inverting

Product Type:

Gate Drivers

 

Features
Qualified for JEDEC JEP180 for hard-switching topologies
600-V GaN-on-Si FET with Integrated gate driver
Integrated high precision gate bias voltage
200-V/ns CMTI
3.6MHz switching frequency
20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
Operates from 7.5-V to 18-V supply
Robust protection
Cycle-by-cycle overcurrent and latched shortcircuit protection with < 100-ns response
Withstands 720-V surge while hard-switching
Self-protection from internal overtemperature and UVLO monitoring
Advanced power management
Digital temperature PWM output
Ideal diode mode reduces third-quadrant losses in LMG3425R050

 

 
 

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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