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LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated

LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated
LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated

Large Image :  LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: LMG3410R070RWHR
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Original Factory
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated

Description
Output Configuration: High Side Output Type: P-Channel
Voltage - Load: 480V (Max) Voltage - Supply (Vcc/Vdd): 9.5V ~ 18V
Current - Output (Max): 12A Rds On (Typ): 70mOhm
Operating Temperature: -40°C ~ 125°C (TJ) Input Type: Non-Inverting
Highlight:

LMG3410R070RWHR GaN IC

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GaN IC Power Switch Driver

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P Channel GaN Driver Integrated rohs

GaN IC LMG3410R070RWHR Power Switch Driver GaN with integrated driver and protection

 

Specifications

1 Driver

1 Output

40 A

9.5 V

18 V

Non-Inverting

15 ns

4.2 ns

- 40 C

+ 125 C

 

Description

LMG341xR070 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

 

LMG341xR070 inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

 

Features

  • GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles

  • Enables High Density Power Conversion Designs

  • Superior System Performance Over Cascode or Stand-alone GaN FETs

  • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout

  • Adjustable Drive Strength for Switching Performance and EMI Control

  • Digital Fault Status Output Signal

  • Only +12 V Unregulated Supply Needed

  • Integrated Gate Driver

  • Zero Common Source Inductance

  • 20 ns Propagation Delay for MHz Operation

  • Process-tuned Gate Bias Voltage for Reliability

  • 25 to 100V/ns User Adjustable Slew Rate

  • Robust Protection

  • Requires No External Protection Components

  • Over-current Protection with <100ns Response

  • >150V/ns Slew Rate Immunity

  • Transient Overvoltage Immunity

  • Overtemperature Protection

  • UVLO Protection on All Supply Rails

 

Simplified Block Diagram

LMG3410R070RWHR GaN IC Power Switch Driver P Channel GaN Driver Integrated 0

5R030
 

 

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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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