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PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Shipped very fast,and was very helpful,New and Original,would highly recommend.

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PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package

PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package
PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package

Large Image :  PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: PMDXB600UNE
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: 6-XFDFN Exposed Pad
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package

Description
Part Number: PMDXB600UNE Power Dissipation: 380 MW
Fall Time: 51 Ns Rise Time: 9.2 Ns
Qg - Gate Charge: 400 PC Number Of Channels: 2 Channel
Highlight:

PMDXB600UNE MOSFET Transistors

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20V MOSFET Transistors

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N channel MOSFET Transistors

PMDXB600UNE 20V Dual N-channel Trench MOSFET Transistors 6-XFDFN Package

 

Product Description Of PMDXB600UNE

PMDXB600UNE is Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

 

Specification Of PMDXB600UNE

Product Status

Active

FET Type

2 N-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

600mA

Rds On (Max) @ Id, Vgs

620mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.7nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

21.3pF @ 10V

Power - Max

265mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

6-XFDFN Exposed Pad

Supplier Device Package

DFN1010B-6

 

Features Of PMDXB600UNE

  • Trench MOSFET technology
  • Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
  • Exposed drain pad for excellent thermal conduction
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM
  • Drain-source on-state resistance RDSon = 470 mΩ

 

Applications Of PMDXB600UNE

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits

 

Package outline Of PMDXB600UNE

PMDXB600UNE 20V Dual N Channel Trench MOSFET Transistors 6 XFDFN Package 0

 

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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