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AIMBG120R160M1 Integrated Circuit Chip 1200V SiC Mosfet Discretes For Automotive

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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AIMBG120R160M1 Integrated Circuit Chip 1200V SiC Mosfet Discretes For Automotive

AIMBG120R160M1 Integrated Circuit Chip 1200V SiC Mosfet Discretes For Automotive
AIMBG120R160M1 Integrated Circuit Chip 1200V SiC Mosfet Discretes For Automotive

Large Image :  AIMBG120R160M1 Integrated Circuit Chip 1200V SiC Mosfet Discretes For Automotive

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: AIMBG120R160M1
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-263-7
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

AIMBG120R160M1 Integrated Circuit Chip 1200V SiC Mosfet Discretes For Automotive

Description
Part Number: AIMBG120R160M1 Product Type: MOSFET
Package: TO-263-7 Operating Temperature: -55 °C - 175 °C
Polarity: N RthJC Max: 160 MΩ
Highlight:

AIMBG120R160M1 Integrated Circuit Chip

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Integrated Circuit Chip SiC Mosfet

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1200V SiC Mosfet

Integrated Circuit Chip AIMBG120R160M1 1200V SiC Mosfet Discretes for Automotive

 

Description of AIMBG120R160M1
The AIMBG120R160M1 is 1200V SiC Mosfet for Automotive has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles.
The compact SMD housing D²PAK (PG-TO263-7) enables a high degree of automation at the customer manufacturing facility and further reduces cost on system level.


Specification Of AIMBG120R160M1

Ciss

258 pF

Coss

14 pF

ID (@25°C) max

15 A

Operating Temperature min max

-55 °C 175 °C

Ptot (@ TA=25°C) max

82 W

Package

TO-263-7

Polarity

N

QG

9.3 nC

Qualification

Automotive

RDS (on) (@ Tj = 25°C)

160 mΩ

RthJC max

1.82 K/W

VDS

1200 V

VGSS, off

0

VGSS, on

20

 

Features of AIMBG120R160M1
Revolutionary semiconductor material - Silicon Carbide
Very low switching losses
Threshold-free on state characteristic
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification
Temperature independent turn-off switching losses
Sense pin for optimized switching performance
Suitable for HV creepage requirements
XT interconnection technology for best-in-class thermal performance

 

Benefits of AIMBG120R160M1
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost

 

Potential Applications of AIMBG120R160M1
On-board Charger
DC-DC Converter

 

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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