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AIMBG120R060M1 Integrated Circuit Chip 33A Silicon Carbide MOSFET Transistors TO-263-7

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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AIMBG120R060M1 Integrated Circuit Chip 33A Silicon Carbide MOSFET Transistors TO-263-7

AIMBG120R060M1 Integrated Circuit Chip 33A Silicon Carbide MOSFET Transistors TO-263-7
AIMBG120R060M1 Integrated Circuit Chip 33A Silicon Carbide MOSFET Transistors TO-263-7

Large Image :  AIMBG120R060M1 Integrated Circuit Chip 33A Silicon Carbide MOSFET Transistors TO-263-7

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: AIMBG120R060M1
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-263-7
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

AIMBG120R060M1 Integrated Circuit Chip 33A Silicon Carbide MOSFET Transistors TO-263-7

Description
Part Number: AIMBG120R060M1 Package: TO263-7
Operating Temperature: -55 °C To 175 °C Drain To Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 33 A Mounting Type: Surface Mount
Highlight:

AIMBG120R060M1 Integrated Circuit Chip

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33A MOSFET Transistors

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Silicon Carbide MOSFET Transistors

Integrated Circuit Chip AIMBG120R060M1 33A Silicon Carbide MOSFET Transistors TO-263-7

 

Description of AIMBG120R060M1

AIMBG120R060M1 is 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles.
Built on a state-of-the-art SiC trench technology combined with .XT interconnection technology the silicon carbide mosfet is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.
The compact SMD housing D²PAK (PG-TO263-7) enables a high degree of automation at the customer manufacturing facility and further reduces cost on system level.


Specification Of AIMBG120R060M1

Ciss

605 pF

Coss

30 pF

Operating Temperature min max

-55 °C 175 °C

Ptot (@ TA=25°C) max

175 W

QG

25 nC

RDS (on) (@ Tj = 25°C)

60 mΩ

RthJC max

1 K/W


Features of AIMBG120R060M1

  • Revolutionary semiconductor material - Silicon Carbide
  • Very low switching losses
  • Threshold-free on state characteristic
  • 0V turn-off gate voltage
  • Benchmark gate threshold voltage, VGS(th)=4.5V
  • Fully controllable dv/dt
  • Commutation robust body diode, ready for synchronous rectification
  • Temperature independent turn-off switching losses
  • Sense pin for optimized switching performance
  • Suitable for HV creepage requirements
  • XT interconnection technology for best-in-class thermal performance

 

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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