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STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2
STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2
STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2 STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

Large Image :  STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: STPSC20H12G-TR
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: D2PAK-2
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

Description
Part Number: STPSC20H12G-TR If - Forward Current: 20 A
Vrrm - Repetitive Reverse Voltage: 1.2 KV Vf - Forward Voltage: 1.35 V
Ifsm - Forward Surge Current: 38 A Ir - Reverse Current: 10 UA
Highlight:

STPSC20H12G-TR Diode IC

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D2PAK-2 Diode IC

STPSC20H12G-TR Diode Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2

 

Product Description Of STPSC20H12G-TR

The STPSC20H12G-TR diode, available in TO-220AC, D²PAK and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
Especially suited for use in PFC and secondary side applications, this STPSC20H12G-TR diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases.


Specification Of STPSC20H12G-TR

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

1200 V

Current - Average Rectified (Io)

20A

Voltage - Forward (Vf) (Max) @ If

1.5 V @ 20 A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0 ns

Current - Reverse Leakage @ Vr

120 µA @ 1200 V

Capacitance @ Vr, F

1650pF @ 0V, 1MHz

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

 

Features Of STPSC20H12G-TR

  • No or negligible reverse recovery
  • Switching behavior independent of temperature
  • Robust high voltage periphery
  • Operating from -40 °C to 175 °C

 

Package Outline Of STPSC20H12G-TR

STPSC20H12G-TR Diode IC Silicon Carbide Schottky 1200V 20A Surface Mount D2PAK-2 0

 

FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

 

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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