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Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module
Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module
Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

Large Image :  Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: A2U12M12W2-F2
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Module
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

Description
Part Number: A2U12M12W2-F2 Package: Module
Input Capacitance (Cies) @ Vce: 7 NF @ 800 V Operating Temperature: 175°C (TJ)
Mounting Type: Chassis Mount Configuration: Three Level Inverter

Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module

 

Description Of A2U12M12W2-F2

A2U12M12W2-F2 is power module represents a leg of a T-type 3-level inverter topology that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on-resistance per unit area and excellent switching performance that is virtually independent of temperature.

 

Product Attributes Of A2U12M12W2-F2

IGBT Silicon Carbide Modules

Full Bridge

SiC

1200 V

-10 V to 22 V

Press Fit

- 40 C

+ 150 C

 

All Features Of A2U12M12W2-F2
3-level topology
ACEPACK 2 power module
13 mΩ of typical RDS(on) each switch
Insulation voltage UL certified of 2.5 kVrms
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press fit contact pins

 

Electrical Topology And Pin Description Of A2U12M12W2-F2

Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module 0

 

FAQ

Q. Are your products original?

A: Yes, all products are original, new original import is our purpose.

Q:Which Certificates do you have?

A:We are ISO 9001:2015 Certified Company and member of ERAI.

Q:Can you support small quantity order or sample?Is the sample free?

A:Yes,we support sample order and small order.Sample cost is different according to your order or project.

Q:How to ship my order? Is it safe?

A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.

Q:What about the lead time?

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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