Product Details:
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Part Number: | SCT011H75G3AG | Drain-source Voltage: | 750 V |
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Drain Current (continuous) At TC = 25 °C: | 110A | Total Power Dissipation At TC = 25 °C: | 652 W |
Reverse Transfer Capacitance(VDS=400V, F=1MHz, VGS=0V ) Typ: | 33.6pF | Diode Forward Voltage(ISD=50A, VGS=0V) Typ: | 2.5V |
SIC Integrated Circuit Chip SCT011H75G3AG Power MOSFET Transistors 750V H2PAK-7
Product Description Of SCT011H75G3AG
SCT011H75G3AG is silicon carbide Power MOSFET device, 11.4 mOhm typ. Operating junction temperature rang is -55°C to 175°C, Very low RDS(on) over the entire temperature range.
Specification Of SCT011H75G3AG
Part Number: | SCT011H75G3AG | Package: | H²PAK-7 |
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Gate-Source Voltage: | -10V To 22V | Thermal Resistance, Junction-To-Ambient: | 50 °C/W |
RDS(On) Typ.: | 11.4 MΩ | Drain-Source Breakdown Voltage(VGS = 0 V, ID = 1 MA) Min: | 750V |
H²PAK-7 Recommended Footprint(SCT011H75G3AG)
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753