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1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

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Reliable components, fast shipping, and excellent support. ShenZhen Mingjiada Electronics Co.,Ltd is our go-to partner for all electronic needs!

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1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module

1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module
1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module
1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module 1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module

Large Image :  1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: DF11MR12W1M1B11BPSA1
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Module
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module

Description
Part Number: DF11MR12W1M1B11BPSA1 Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
Power - Max: 20mW Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V

1200V Automotive IGBT Modules DF11MR12W1M1B11BPSA1 2N-Channel Transistors Module​


Product Description Of DF11MR12W1M1B11BPSA1

DF11MR12W1M1B11BPSA1 is 1200 V / 11 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology, with enhanced current rating of CoolSiC™ Schottky diodes in boost stage to allow for higher input current from PV panels.


Specification Of DF11MR12W1M1B11BPSA1

Part Number DF11MR12W1M1B11BPSA1
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
50A (Tj)
Rds On (Max) @ Id, Vgs
22.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id
5.55V @ 20mA

 

Features Of DF11MR12W1M1B11BPSA1

  • High current density
  • Integrated NTC temperature sensor
  • Low inductive design
  • PressFIT contact technology
  • Best in class switching and conduction losses

 

Other Electronic Components In Stock

Part Number Package
BQ294522DRVR QFN
LMX2531LQ2080E QFN
AD9523-1BCPZ QFN
ISP1568AHLUM TQFP
BD2610GW BGA
FH8065301685597 BGA

 

FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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