Product Details:
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Part Number: | DF23MR12W1M1PB11BPSA1 | Technology: | Silicon Carbide (SiC) |
---|---|---|---|
Drain To Source Voltage (Vdss): | 1200V (1.2kV) | Rds On (Max) @ Id, Vgs: | 45mOhm @ 25A, 15V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tj) | Configuration: | 2 N-Channel (Dual) |
Silicon Carbide DF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW 2N-Channel
Product Description Of DF23MR12W1M1PB11BPSA1
DF23MR12W1M1PB11BPSA1 is Booster 1200 V CoolSiC™ MOSFET Module, 2 N-Channel (Dual) Transistors, Silicon Carbide (SiC) Module.
Specification Of DF23MR12W1M1PB11BPSA1
Part Number | DF23MR12W1M1PB11BPSA1 |
Gate Charge (Qg) (Max) @ Vgs
|
62nC @ 15V
|
Input Capacitance (Ciss) (Max) @ Vds
|
1840pF @ 800V
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Power - Max
|
20mW
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Operating Temperature
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-40°C ~ 150°C (TJ)
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Mounting Type
|
Chassis Mount
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Package / Case
|
Module
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Supplier Device Package
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AG-EASY1B-2
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Features Of DF23MR12W1M1PB11BPSA1
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753