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2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

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Certification

China ShenZhen Mingjiada Electronics Co.,Ltd. certification

China ShenZhen Mingjiada Electronics Co.,Ltd. certification

Customer Reviews

Shipped very fast,and was very helpful,New and Original，would highly recommend.

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Professional and fast service,acceptable prices for goods. excellent communication,product as expected. I highly recommend this supplier.

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The customer service provided by is excellent. They are always responsive and helpful, ensuring our needs are met promptly.

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Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

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Reliable components, fast shipping, and excellent support. ShenZhen Mingjiada Electronics Co.,Ltd is our go-to partner for all electronic needs!

—— Sam From United States

High-quality parts and a seamless ordering process. Highly recommend ShenZhen Mingjiada Electronics Co.,Ltd for any electronics project!

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2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

Large Image : 2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	FF6MR12W2M1B11BOMA1

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	Module
Delivery Time:	5-8 work days
Payment Terms:	T/T, L/C, Western Union

Contact Now

2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

Description

Part Number:	FF6MR12W2M1B11BOMA1	Mounting Type:	Chassis Mount
Operating Temperature(Min):	-40°C (TJ)	Series:	CoolSiC™+
Rds On (Max) @ Id, Vgs:	5.63mOhm @ 200A, 15V	Power(Max):	20mW (Tc)

2N-Channel FF6MR12W2M1B11BOMA1 Automotive IGBT Modules 1200V Silicon Carbide

Product Description Of FF6MR12W2M1B11BOMA1

FF6MR12W2M1B11BOMA1 is 2 N-Channel (Dual) Silicon Carbide (SiC) MOSFETs Module, 1200V Mosfet Array, Chassis Mount.

Specification Of FF6MR12W2M1B11BOMA1

Part Number	FF6MR12W2M1B11BOMA1
Configuration	2 N-Channel (Dual)
Vgs(th) (Max) @ Id	5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs	496nC @ 15V
Power - Max	20mW (Tc)
Mounting Type	Chassis Mount
Supplier Device Package	AG-EASY2BM-2

Features Of FF6MR12W2M1B11BOMA1

VDSS = 1200V
ID nom = 200A / IDRM = 400A
High Frequency Switching application
Rugged mounting due to integrated mounting clamps

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AFT26H200W03SR6	NI1230S4S
MT5580KUFI	BGA
LM285BYMX-2.5	SOP8
TH72011KDC	SOP8

FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Tag:

Automotive IGBT Modules 400A,

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Contact Details

ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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Drain to Source Voltage (Vdss): 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C: 400A

Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V

Vgs(th) (Max) @ Id: 5.55V @ 240mA

950V 400A Automotive IGBT Modules 3 Level IGBT Module F3L400R10W3S7B11BPSA1

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Part Number: F3L400R10W3S7B11BPSA1

IGBT Type: Trench

Product Status: Active

Voltage - Collector Emitter Breakdown (Max): 950 V

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Voltage - Collector Emitter Breakdown (Max): 950 V

Current - Collector (Ic) (Max): 310 A

Power - Max: 20 mW

Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 400A

HEV Silicon Carbide Power Modules 1200V 200A Automotive Modules FS05MR12A6MA1BBPSA1

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FET Feature: Silicon Carbide (SiC)

Drain to Source Voltage (Vdss): 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C: 200A

Mounting Type: Chassis Mount

Automotive IGBT Modules FF300R08W2P2B11ABOMA1 750V 300A Half Bridge IGBT Module

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Part Number: FF300R08W2P2B11ABOMA1

Voltage - Collector Emitter Breakdown (Max): 750 V

Current - Collector (Ic) (Max): 200 A

Power - Max: 20 mW

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