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Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Professional and fast service,acceptable prices for goods. excellent communication,product as expected. I highly recommend this supplier.

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High Quality and Reliable Performance: "The electronic components we received from [ShenZhen Mingjiada Electronics Co.,Ltd.] are of high quality and have shown reliable performance in our devices."

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Competitive Pricing: The pricing offered by is very competitive, making it an excellent choice for our procurement needs.

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Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

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Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module

Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module
Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module
Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module

Large Image :  Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: FF45MR12W1M1B11BOMA1
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Module
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module

Description
Part Number: FF45MR12W1M1B11BOMA1 DC Drain Current: 25A
Gate Threshold Voltage(Typ): 4.5V Operating Temperature(Min): -40°C (TJ)
Operating Temperature(Max): 150°C (TJ) Rain To Source Voltage (Vdss): 1200V (1.2kV)

Automotive IGBT Modules FF45MR12W1M1B11BOMA1 Dual 1200V CoolSiC MOSFET Module​


Product Description Of FF45MR12W1M1B11BOMA1

FF45MR12W1M1B11BOMA1 is Dual 1200V CoolSiC MOSFET Module, using CoolSiC ™ MOSFET, temperature detection NTC and PressFIT crimping technology.


Specification Of FF45MR12W1M1B11BOMA1

Part Number FF45MR12W1M1B11BOMA1
Gate Charge (Qg) (Max) @ Vgs
62nC @ 15V
Power - Max
20mW (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
AG-EASY1BM-2

 
Features Of Automotive IGBT Modules

  • High current density
  • Excellent switching and on state losses
  • Low inductance design
  • Module complies with RoHS

 

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LNK616DG SOP-7
SSL2101T SOP
MP4032-2GS SOP
SN74CB3Q16211ZQLR BGA


FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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