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4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Competitive Pricing: The pricing offered by is very competitive, making it an excellent choice for our procurement needs.

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Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

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4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W

4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W
4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W

Large Image :  4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: MSCSM170HM23CT3AG
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: Module
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W

Description
Part Number: MSCSM170HM23CT3AG Power Dissipation TC = 25 °C: 602W(Max)
Drain-Source ON Resistance(Max): 22.5mΩ Gate–Source Leakage Current(VGS = 20 V; VDS = 0 V): 200nA(Max)
Internal Gate Resistance(Typ): 2.93Ω Junction-to-case Thermal Resistance(Max): 0.25°C/W

4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W ​

 

Product Description Of MSCSM170HM23CT3AG

MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module.

 

Specification Of MSCSM170HM23CT3AG

Part Number MSCSM170HM23CT3AG
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Full Bridge)
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C
124A (Tc)
Rds On (Max) @ Id, Vgs
22.5mOhm @ 60A, 20V
Vgs(th) (Max) @ Id
3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
356nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
6600pF @ 1000V
Power - Max
602W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module

 

Electrical Schematic Of  MSCSM170HM23CT3AG

4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W 0
 

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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