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SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

Certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
Customer Reviews
Shipped very fast,and was very helpful,New and Original,would highly recommend.

—— Nishikawa From Japan

Professional and fast service,acceptable prices for goods. excellent communication,product as expected. I highly recommend this supplier.

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High Quality and Reliable Performance: "The electronic components we received from [ShenZhen Mingjiada Electronics Co.,Ltd.] are of high quality and have shown reliable performance in our devices."

—— Richardg From Germany

Competitive Pricing: The pricing offered by is very competitive, making it an excellent choice for our procurement needs.

—— Tim From Malaysia

The customer service provided by is excellent. They are always responsive and helpful, ensuring our needs are met promptly.

—— Vincent From Russia

Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

—— Nishikawa From Japan

Reliable components, fast shipping, and excellent support. ShenZhen Mingjiada Electronics Co.,Ltd is our go-to partner for all electronic needs!

—— Sam From United States

High-quality parts and a seamless ordering process. Highly recommend ShenZhen Mingjiada Electronics Co.,Ltd for any electronics project!

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SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors
SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

Large Image :  SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IMBG65R163M1H
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-263-8
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

Description
Part Number: IMBG65R163M1H Id - Continuous Drain Current: 17 A
Maximum Operating Temperature: + 175 C Drive Voltage: 18V
Minimum Operating Temperature: - 55 C Channel Mode: Enhancement

SiC Trench Power Device IMBG65R163M1H TO-263-8 Package 650 V Transistors

 

Product Description Of IMBG65R163M1H

IMBG65R163M1H suitable for high temperature and harsh operations,it enables the simplified and cost effective deployment of the highest system efficiency.

 

Specification Of IMBG65R163M1H

Part Number

IMBG65R163M1H

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

 

Features Of​ IMBG65R163M1H

 

  • Superior gate oxide reliability

  • Tj.max=175"C and excellent thermal behavior

 

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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