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1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Shipped very fast,and was very helpful,New and Original,would highly recommend.

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Professional and fast service,acceptable prices for goods. excellent communication,product as expected. I highly recommend this supplier.

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High Quality and Reliable Performance: "The electronic components we received from [ShenZhen Mingjiada Electronics Co.,Ltd.] are of high quality and have shown reliable performance in our devices."

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Competitive Pricing: The pricing offered by is very competitive, making it an excellent choice for our procurement needs.

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Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

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1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole

1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole
1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole

Large Image :  1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IMZ120R350M1H
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-4
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole

Description
Part Number: IMZ120R350M1H Benchmark Gate Threshold Voltage: VGS(th) = 4.5V
Tvj,max: 175°C ID TC = 25°C, Rth(max): 4.7A
Drain-source Voltage, Tvj ≥ 25°C: 1200V Short-circuit Withstand Time: 3µs

1200V SiC Trench MOSFET IMZ120R350M1H N-Channel Transistors TO-247-4 Through Hole​

 

Product Description Of IMZ120R350M1H

IMZ120R350M1H is CoolSiC™ 1200V SiC Trench MOSFET, N-Channel Silicon Carbide MOSFET Transistors.

 

Specification Of IMZ120R350M1H

Part Number IMZ120R350M1H
Vgs(th) (Max) @ Id
5.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 18 V
Vgs (Max)
+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 800 V
Power Dissipation (Max)
60W (Tc)

 

Features Of​ IMZ120R350M1H

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost

 

Other Electronic Components In Stock​

Part Number Package
XC7A100T-1FGG484C BGA484
XC7A100T-1FGG676C BGA676
XC7A100T-3FGG676E BGA676
XC7A100T-L1FGG484I BGA484
XC7A100T-1FG676I 676-BGA
XC7A100T-L2CSG324E BGA324


FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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