Product Details:
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Part Number: | IMBG120R350M1H | Pulsed Body Diode Current: | 169 A |
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Short-circuit Withstand Time: | 3 µs | Power Dissipation: | 300W |
Storage Temperature: | 55-150 °C | Thermal Resistance: | 62 K/W |
Discrete Semiconductor Transistors IMBG120R350M1H TO-263-8 Surface Mount
Product Description Of IMBG120R350M1H
IMBG120R350M1H due to the best-in-class RDS(on) and wider safe operating area (SOA), the device is also ideal for battery-powered applications (BPA) and battery management systems (BMS).
Specification Of IMBG120R350M1H
Part Number: |
IMBG120R350M1H |
Input Capacitance (Ciss) (Max) @ Vds: |
2290 PF @ 800 V |
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FET Feature: |
Standard |
Operating Temperature: |
-55°C ~ 175°C (TJ) |
Short Circuit Withstand Time: |
3 µs |
Benchmark Gate Threshold Voltage: |
4.5V |
Potential applications Of IMBG120R350M1H
Drives
Infrastructure – Charger
Energy generation - Solar string inverter and solar optimizer
Industrial power supplies - Industrial UPS
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753