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650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12

650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12
650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12

Large Image :  650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IMBG65R072M1H
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-263-8
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12

Description
Part Number: IMBG65R072M1H Technology: SiC
Transistor Polarity: N-Channel Id - Continuous Drain Current: 33 A
Rds On - Drain-Source Resistance: 94 MOhms Vgs - Gate-Source Voltage: - 5 V, + 23 V

650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12

 

Product Description Of IMBG65R072M1H

IMBG65R072M1H CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

 

Specification Of IMBG65R072M1H

Part Number
IMBG65R072M1H
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
94mOhm @ 13.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
744 pF @ 400 V


Features Of IMBG65R072M1H

  • Optimizedswitchingbehaviorathighercurrents
  • CommutationrobustfastbodydiodewithlowQf
  • Superiorgateoxidereliability
  • Tj,max=175°Candexcellentthermalbehavior
  • LowerRDS(on)andpulsecurrentdependencyontemperature
  • Increasedavalanchecapability
  • Compatiblewithstandarddrivers(recommendeddrivingvoltage:0V-18V)
  • Kelvinsourceprovidesupto4timeslowerswitchinglosses

 

Applications Of IMBG65R072M1H

  • TelecomandServerSMPS
  • UPS(uninterruptablepowersupplies)
  • SolarPVinverters
  • EVcharginginfrastructure
  • Energystorageandbatteryformation
  • ClassDamplifiers

 

Block Diagram Of IMBG65R072M1H

650V CoolSiC MOSFETs IMBG65R072M1H N-Channel 33A 140W Surface Mount PG-TO263-7-12 0

 

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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