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Product Details:
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| Part Number: | IMZA65R048M1H | VGS: | -5 - 23 V |
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| Gate-source Leakage Current: | 100 NA | Zero Gate Voltage Drain Current: | 150 µA |
| Gate Resistance: | 6.0 Ω | Open Drain: | 1MHz |
IMZA65R048M1H High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses.
| Part Number: | IMZA65R048M1H | Virtual Junction Temperature: | -55 - 175 °C |
| Drain-Source Voltage: | 1200 V | Mounting Torque: | 0.6 Nm |
| Body Diode Forward Voltage: | 5.2 V | Zero Gate Voltage Drain Current: | 165 µA |
| Part Number | Package |
|---|---|
| SPC5606BK0VLL6 | LQFP100 |
| SPC5668GF1AVMG | BGA208 |
| SPC5603BK0VLH4 | QFP64 |
| SPC5643AF0MVZ2 | BGA |
| SPC5643AF0MLU2 | LQFP176 |
| MSC040SMA120 | TO-247 |
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753