Product Details:
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Part Number: | IMBG65R107M1HXTMA1 | Series: | CoolSIC™ M1 |
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FET Type: | N-Channel | Technology: | SiCFET (Silicon Carbide) |
Drain To Source Voltage (Vdss): | 650 V | Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Integrated Circuit Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors
Product Description Of IMBG65R107M1HXTMA1
IMBG65R107M1HXTMA1 is 650V CoolSiC M1 SiC Trench Power Device, SMD Compact Package SiC MOSFETs.
Specification Of IMBG65R107M1HXTMA1
Part Number | IMBG65R107M1HXTMA1 |
Input Capacitance (Ciss) (Max) @ Vds
|
496 pF @ 400 V
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Power Dissipation (Max)
|
110W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TO263-7-12
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Package / Case
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TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
|
Features Of IMBG65R107M1HXTMA1
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753