Product Details:
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Part Number: | IXBH32N300 | Voltage - Collector Emitter Breakdown (Max): | 3000 V |
---|---|---|---|
Current - Collector (Ic) (Max): | 80 A | Vce(on) (Max) @ Vge, Ic: | 3.2V @ 15V, 32A |
Power - Max: | 400 W | Operating Temperature: | -55°C ~ 150°C (TJ) |
Integrated Circuit Chip IXBH32N300 Single IGBTs Transistors TO-247-3 Through Hole
Product Description Of IXBH32N300
IXBH32N300 is High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor.
Specification Of IXBH32N300
Part Number: | IXBH32N300 |
Product Category: | IGBT Transistors |
Si | |
TO-247-3 | |
Through Hole | |
Single | |
3 kV | |
2.8 V | |
- 20 V, + 20 V | |
80 A | |
400 W | |
- 55 C | |
+ 150 C |
Package Outline Of IXBH32N300
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753