Electronic Integrated Circuits SCTW35N65G2V N-Channel 650 V 45A Transistors

Electronic Integrated Circuits SCTW35N65G2V N-Channel 650 V 45A Transistors

Product Description Of SCTW35N65G2V

SCTW35N65G2V silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology.

Specification Of SCTW35N65G2V

Features Of SCTW35N65G2V

• Very fast and robust intrinsic body diode

• Extremely low gate charge and input capacitance

• Very high operating junction temperature capability (TJ =200°C)

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity