Product Details:
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Part Number: | SCTWA35N65G2V | FET Type: | N-Channel |
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Power Dissipation: | 208W (Tc) | Operating Temperature: | -55°C ~ 175°C (TJ) |
Unit Weight: | 6.100 G | Channel Mode: | Enhancement |
Integrated Circuit Chip SCTWA35N65G2V Silicon carbide Power MOSFET Transistors
Product Description Of SCTWA35N65G2V
SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads package.
Specification Of SCTWA35N65G2V
Part Number |
SCTWA35N65G2V |
|
N-Channel |
|
1 Channel |
|
650 V |
|
45 A |
|
67 mOhms |
Features Of SCTWA35N65G2V
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753