Product Details:
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Part Number: | TW030N120C,S1F | Input Capacitance (Ciss) (Max) @ Vds: | 2925 PF @ 800 V |
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Gate Charge (Qg) (Max) @ Vgs: | 82 NC @ 18 V | Rds On - Drain-Source Resistance: | 40 MOhms |
Typical Turn-Off Delay Time: | 100 Ns | FET Type: | N-Channel |
Single FETs MOSFETs Transistors TW030N120C,S1F Integrated Circuit Chip TO-247-3
Product Description Of TW030N120C,S1F
TW030N120C,S1F 1200V Silicon Carbide MOSFET Transistors, package is TO-247-3, Through Hole.
Specification Of TW030N120C,S1F
Part Number: | TW030N120C,S1F | Technology: | SiCFET (Silicon Carbide) |
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Input Capacitance: | 2925pF | Gate Threshold Voltage(Min): | 3V |
Drain Cut-Off Current(Max): | 20µA | Channel-To-Ambient Thermal Resistance(Max): | 50°C/W |
Characteristics Curves Of TW030N120C,S1F
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753