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SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Shipped very fast,and was very helpful,New and Original,would highly recommend.

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Professional and fast service,acceptable prices for goods. excellent communication,product as expected. I highly recommend this supplier.

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High Quality and Reliable Performance: "The electronic components we received from [ShenZhen Mingjiada Electronics Co.,Ltd.] are of high quality and have shown reliable performance in our devices."

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SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W

SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W
SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W
SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W

Large Image :  SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: SCT2080KEGC11
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W

Description
Part Number: SCT2080KEGC11 Rds On - Drain-Source Resistance: 80 MOhms
Vgs - Gate-Source Voltage: - 6 V, + 22 V Vgs Th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 106 NC Maximum Operating Temperature: + 175°C

SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W​

 

Product Description Of SCT2080KEGC11

SCT2080KEGC11 is 1200V, 80mΩ N-channel Silicon Carbide Power MOSFET Transistors.

 

Specification Of SCT2080KEGC11

Part Number: SCT2080KEGC11 Gate Charge (Qg) (Max) @ Vgs: 106 NC @ 18 V
Vgs (Max): +22V, -6V Input Capacitance (Ciss) (Max) @ Vds: 2080 PF @ 800 V
Power Dissipation (Max): 262W (Tc) Operating Temperature: 175°C (TJ)

 

Typical Transfer Characteristics Of​ SCT2080KEGC11

SCT2080KEGC11 N-channel Silicon Carbide TO-247-3 Power MOSFET Transistors 262W 0

 

Other Electronic Components In Stock​

Part Number Package
CY8C5666AXI-LP001 LQFP100
2229056-1 SMD
LT3651EUHE-8.2 QFN36
MMPF0100F0AEP QFN-56
F381A475MMA SMD
16TQC100MYF SMD

 

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
 
 

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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