Product Details:
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Part Number: | SCT4013DEC11 | Technology: | SiCFET (Silicon Carbide) |
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Drain To Source Voltage (Vdss): | 750 V | Current - Continuous Drain (Id) @ 25°C: | 105A (Tj) |
Power Dissipation (Max): | 312W | Operating Temperature: | 175°C (TJ) |
N-Channel 750V 105A SCT4013DEC11 SiC Power MOSFET Through Hole TO-247N
Product Description Of SCT4013DEC11
SCT4013DEC11 N-Channel Silicon Carbide (SiC) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss.
Specification Of SCT4013DEC11
Part Number: | SCT4013DEC11 |
16.9 mOhms | |
- 4 V, + 21 V | |
4.8 V | |
170 nC | |
+ 175 C | |
Enhancement |
Features Of SCT4013DEC11
Applications Of SCT4013DEC11
lInner Circuit Of SCT4013DEC11
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753