IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

Name: IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3
Brand: ShenZhen Mingjiada Electronics Co.,Ltd.
SKU: IPW60R017C7
Availability: InStock

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IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

Large Image : IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

Product Details:

Place of Origin:	CN
Brand Name:	Original Factory
Certification:	Lead free / RoHS Compliant
Model Number:	IPW60R017C7

Payment & Shipping Terms:

Minimum Order Quantity:	10
Price:	Contact for Sample
Packaging Details:	TO-247-3
Delivery Time:	5-8 work days
Payment Terms:	T/T,L/C,Western Union

Contact Now

IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

Description

Part Number:	IPW60R017C7	Vgs (Max):	±20V
Power Dissipation (Max):	446W (Tc)	Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole	Input Capacitance (Ciss) (Max) @ Vds:	9890 PF @ 400 V
Highlight:	IPW60R017C7 , IPW60R017C7 Integrated Circuit Chip , N-Channel MOSFET Transistors

IPW60R017C7 Integrated Circuit Chip 600V N-Channel MOSFET Transistors TO-247-3

Product Description

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E_oss) compared to the CoolMOS™ CP, delivering outstanding performance in PFC, TTF and other hard-switching topologies.

Specifications

Parameter	Value
Part Number	IPW60R017C7
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (V_dss)	600 V
Current - Continuous Drain (I_d) @ 25°C	109A (T_c)
Drive Voltage (Max R_ds On, Min R_ds On)	10V
R_ds On (Max) @ I_d, V_gs	17mΩ @ 58.2A, 10V
V_gs(th) (Max) @ I_d	4V @ 2.91mA
Gate Charge (Q_g) (Max) @ V_gs	240 nC @ 10 V

Key Features

Reduced switching loss parameters such as Q_G, C_oss, E_oss
Best-in-class figure of merit Q_G*R_DS(on)
Increased switching frequency
Rugged body diode

Benefits

Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R_DS(on)
Can be used in many more positions for both hard and soft switching topologies

Potential Applications

Server
Telecom
PC power
Solar
Industrial
USB-PD

Other Available Components

Part Number	Package
5CEFA4M13I7N	BGA
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TPS650942A0RSKR	VQFN64
TPS63070RNMR	VQFN-15
MSP430F2481TPMR	LQFP64
STM32H743IIT6	LQFP176

Frequently Asked Questions

Are your products original?

Yes, all products are original, new original import is our purpose.

Which Certificates do you have?

We are ISO 9001:2015 Certified Company and member of ERAI.

Can you support small quantity order or sample? Is the sample free?

Yes, we support sample order and small order. Sample cost is different according to your order or project.

How to ship my order? Is it safe?

We use express services such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and we ensure safety, taking responsibility for any product damage to your order.

What about the lead time?

We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Tag:

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

IPW60R017C7 600V N-Channel MOSFET Transistor with 109A Continuous Drain Current and 446W Power Dissipation TO-247-3

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