Integrated Circuit Chip GTVA262701FA-V2-R2 270W RF GaN On SiC HEMT Transistors

Integrated Circuit Chip GTVA262701FA-V2-R2 270W RF GaN On SiC HEMT Transistors​

Product Description Of GTVA262701FA-V2-R2

GTVA262701FA-V2-R2 is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.

Specification Of GTVA262701FA-V2-R2

Feature Of GTVA262701FA-V2-R2

• GaN on SiC HEMT technology
• Input matched
• Typical pulsed CW performance: 10 µs pulse width, 10% duty cycle, 2690 MHz, 48 V
- Output power at P3dB = 270 W
- Efficiency = 66%
- Gain = 18.1 dB
• Human Body Model Class 1B (per ANSI/ESDA/ JEDEC JS-001)
• Capable of handling 10:1 VSWR @48 V, 60 W (WCDMA) output power
• Pb-free and RoHS compliant

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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
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A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
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A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.