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Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC

Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC
Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC

Large Image :  Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: MT53E1536M32D4DE-046 AIT:B
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: VFBGA-200
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC

Description
Part Number: MT53E1536M32D4DE-046 AIT:B Memory Format: DRAM
Memory Size: 48Gbit Clock Frequency: 2.133 GHz

Memory IC Chip MT53E1536M32D4DE-046 AIT:B 48Gbit Parallel SDRAM Mobile Memory IC


Product Description Of MT53E1536M32D4DE-046 AIT:B

MT53E1536M32D4DE-046 AIT:B 48Gb low-power SDRAM (LPDDR4x) is a high-speed CMOS dynamic random access memory. The memory device is optimized to solve power consumption problems in battery-powered applications. The LPDDR4 memory device optimizes x16, x32, and x64 configurations to save BOM for some applications. The memory is suitable for handheld devices, battery-powered applications and ultra-portable devices.


Specification Of MT53E1536M32D4DE-046 AIT:B

Product Category:

DRAM

SDRAM Mobile - LPDDR4

48 Gbit

32 bit

2.133 GHz

VFBGA-200

1.5 G x 32

1.1 V

- 40 C

+ 85 C

 

Feature Of MT53E1536M32D4DE-046 AIT:B

  • Ultra-low-voltage core and I/O power supplies

  • 16n prefetch DDR architecture

  • 8 internal banks per channel for concurrent operation

  • Single-data-rate CMD/ADR entry

  • Bidirectional/differential data strobe per byte lane

  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling

  • Up to 8.5 GB/s per die

  • On-chip temperature sensor to control self refreshrate

  • Partial-array self refresh

  • Selectable output drive strength

  • Clock-stop capability


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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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