Product Details:
|
Part Number: | C2M0280120D | Channel Mode: | Enhancement |
---|---|---|---|
Forward Transconductance - Min: | 2.8 S | Id - Continuous Drain Current: | 10 A |
Pd - Power Dissipation: | 62.5 W | Qg - Gate Charge: | 5.6 NC |
Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3
Product Description Of C2M0280120D
C2M0280120D is 1200V, 320mΩ, 10A N-Channel Enhancement Mode SiC MOSFET Transistors in TO-247-3 package.
Specification Of C2M0280120D
FET Type
|
N-Channel
|
Technology
|
SiCFET (Silicon Carbide)
|
Drain to Source Voltage (Vdss)
|
1200 V
|
Current - Continuous Drain (Id) @ 25°C
|
10A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
20V
|
Rds On (Max) @ Id, Vgs
|
370mOhm @ 6A, 20V
|
Vgs(th) (Max) @ Id
|
2.8V @ 1.25mA (Typ)
|
Gate Charge (Qg) (Max) @ Vgs
|
20.4 nC @ 20 V
|
Vgs (Max)
|
+25V, -10V
|
Input Capacitance (Ciss) (Max) @ Vds
|
259 pF @ 1000 V
|
Power Dissipation (Max)
|
62.5W (Tc)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Through Hole
|
Supplier Device Package
|
TO-247-3
|
Package / Case
|
TO-247-3
|
Features Of C2M0280120D
Benefits Of C2M0280120D
Applications Of C2M0280120D
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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753