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Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3

Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3
Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3 Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3

Large Image :  Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: C2M0280120D
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3

Description
Part Number: C2M0280120D Channel Mode: Enhancement
Forward Transconductance - Min: 2.8 S Id - Continuous Drain Current: 10 A
Pd - Power Dissipation: 62.5 W Qg - Gate Charge: 5.6 NC

Integrated Circuit Chip C2M0280120D 1200V Silicon Carbide MOSFET Transistors TO-247-3

 

Product Description Of C2M0280120D

C2M0280120D is 1200V, 320mΩ, 10A N-Channel Enhancement Mode SiC MOSFET Transistors in TO-247-3 package.


Specification Of C2M0280120D

FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id
2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
20.4 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
259 pF @ 1000 V
Power Dissipation (Max)
62.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3


Features Of C2M0280120D

  • Stable RDS(ON) over temperature
  • Available in package options with separate Kelvin source pin
  • Extremely fast switching
  • Reduction of heat-sink requirements

 

Benefits Of C2M0280120D

  • Easier to drive (+15V gate drive)
  • Improved system-level efficiency
  • Rugged body diode (no need for external diode)
  • Avalanche ruggedness


Applications Of C2M0280120D

  • Solar inverters and energy storage
  • Onboard and fast DC EV-Charging Systems
  • Motor control and drives
  • Welding and inductive heating
  • Auxiliary power supplies
  • High-voltage DC/DC converters


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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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