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STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors

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STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors

STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors
STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors
STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors

Large Image :  STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: STW35N60DM2
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union
Contact Now

STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors

Description
Part Number: STW35N60DM2 Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 28 A
Rds On - Drain-Source Resistance: 110 MOhms Pd - Power Dissipation: 210 W

STW35N60DM2 Integrated Circuit Chip 600V 28A N-Channel Power MOSFET Transistors

 

Product Description Of STW35N60DM2

STW35N60DM2 is high voltage N-channel Power MOSFET Transistor, it is part of the MDmesh™ DM2 fast recovery diode series.
STW35N60DM2 offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.


Specification Of STW35N60DM2

Series
MDmesh™ DM2
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
110mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 100 V
Power Dissipation (Max)
210W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3


Features Of STW35N60DM2

Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected


Applications Of STW35N60DM2

Switching Applications


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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Tag:

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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